Trench MOSFET. FDMC86520L Datasheet

FDMC86520L Datasheet PDF, Equivalent


Part Number

FDMC86520L

Description

N-Channel Power Trench MOSFET

Manufacture

Fairchild Semiconductor

Total Page 7 Pages
PDF Download
Download FDMC86520L Datasheet


FDMC86520L Datasheet
August 2011
FDMC86520L
N-Channel Power Trench® MOSFET
60 V, 22 A, 7.9 mΩ
Features
„ Max rDS(on) = 7.9 mΩ at VGS = 10 V, ID = 13.5 A
„ Max rDS(on) = 11.7 mΩ at VGS = 4.5 V, ID = 11.5 A
„ Low Profile - 1 mm max in Power 33
„ 100% UIL Tested
„ RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low rDS(on), fast switching speed and body
diode reverse recovery performance.
Applications
„ Primary Switch in isolated DC-DC
„ Synchronous Rectifier
„ Load Switch
Top Bottom
Pin 1
S SG
S
DD
D
D
MLP 3.3x3.3
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
D5
D6
D7
D8
(Note 1a)
(Note 3)
(Note 1a)
4G
3S
2S
1S
Ratings
60
±20
22
55
13.5
60
79
40
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
3.1
53
°C/W
Device Marking
FDMC86520L
Device
FDMC86520L
Package
Power 33
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2011 Fairchild Semiconductor Corporation
FDMC86520L Rev.C
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/

FDMC86520L Datasheet
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, referenced to 25 °C
VDS = 48 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
60 V
29 mV/°C
1
±100
μA
nA
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 μA
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 13.5 A
VGS = 4.5 V, ID = 11.5 A
VGS = 10 V, ID = 13.5 A, TJ = 125 °C
VDS = 5 V, ID = 13.5 A
1
1.7 3 V
-7 mV/°C
6.5 7.9
9.1 11.7 mΩ
9 11
49 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 30 V, VGS = 0 V,
f = 1 MHz
3420
638
25
0.5
4550
850
40
pF
pF
pF
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Qg(TOT)
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Total Gate Charge
Gate to Drain “Miller” Charge
VDD = 30 V, ID = 13.5 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V
VDD = 30 V,
ID = 13.5 A
15 30 ns
5.2 10 ns
32 55 ns
3.4 10 ns
45 64 nC
21 30 nC
9.6 nC
4.9 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 13.5 A
VGS = 0 V, IS = 2 A
(Note 2)
(Note 2)
0.82 1.3
0.71 1.2
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 13.5 A, di/dt = 100 A/μs
38 62 ns
21 34 nC
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
53 °C/W when mounted on a
1 in2 pad of 2 oz copper
125 °C/W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C; N-ch: L = 0.3 mH, IAS = 23 A, VDD = 54 V, VGS = 10 V.
FDMC86520L Rev.C
2
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/


Features Datasheet pdf FDMC86520L N-Channel PowerTrench® MOSFE T August 2011 FDMC86520L N-Channel Po wer Trench® MOSFET 60 V, 22 A, 7.9 mΩ Features General Description This N-Ch annel MOSFET has been designed specific ally to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchrono us or conventional switching PWM contro llers.It has been optimized for low gat e charge, low rDS(on), fast switching s peed and body diode reverse recovery pe rformance. „ Max rDS(on) = 7.9 mΩ at VGS = 10 V, ID = 13.5 A „ Max rDS(on) = 11.7 mΩ at VGS = 4.5 V, ID = 11.5 A „ Low Profile - 1 mm max in Power 33 100% UIL Tested „ RoHS Compliant Ap plications „ Primary Switch in isolate d DC-DC „ Synchronous Rectifier „ Loa d Switch Top Pin 1 S S S G Bottom D D D D D D D 8 1 S 5 6 7 4 3 2 G S S D MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Volta ge Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Con.
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