FDMS86105

FDMS86105 N-Channel Shielded Gate PowerTrench® MOSFET October 2014 FDMS86105 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 26 A, 34 mΩ Features General Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 6 A „ Max rDS(on) = 54 mΩ at VGS = 6 V, ID = 4.5 A „ Advanced package and silicon combination for low rDS(on) and high efficiency „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. Applications „ Primary DC-DC „ Secondary DC-DC „ Load Switch Top Bottom Pin 1 S S D S S G S D S D D D D G D D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 3) (Note 1a) Ratings 100 ±20 26 6 30 50 48 2.5 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information 2.6 (Note 1a) 50 °C/W Device Marking FDMS8...