FGA30N65SMD

FGA30N65SMD 650 V, 30 A Field Stop IGBT July 2013 FGA30N65SMD 650 V, 30 A Field Stop IGBT Features Maximum Junction Temperature : TJ =175 C Positive Temperature Co-efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(sat) =1.98 V(Typ.) @ IC = 30 A Fast Switching Tighten Parameter Distribution RoHS Compliant o General Description Using novel field stop IGBT technology, Fairchild®’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, induction heating, telecom, ESS and PFC applications where low conduction and switching losses are essential. Applications Solar Inverter, UPS, Welder, PFC, Induction Heating Telecom, ESS C G TO-3PN G CE E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM (1) PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Forward Current Diode Forward Current Pulsed Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ TC = 25oC @ TC = 100oC @ TC = 25 C @ TC = 100oC o Ratings 650  20  30 @ TC = 25oC @ TC = 100oC 60 30 90 40 20 120 300 150 -55 to +175 -55 to +175 300 Unit V V V A A A A A A W W o C oC o C Notes: 1: Repetitive rating: Pulse width...