N0600N Datasheet (data sheet) PDF





N0600N Datasheet - MOS FIELD EFFECT TRANSISTOR

N0600N   N0600N  

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Preliminary Data Sheet N0600N MOS FIELD EFFECT TRANSISTOR Description R07DS02 20EJ0100 Rev.1.00 Jan 25, 2011 The N06 00N is N-channel MOS Field Effect Trans istor designed for high current switchi ng applications. Features • Low on-s tate resistance ⎯ RDS(on)1 = 25 mΩ MAX. (VGS =10 V, ID = 15 A) ⎯ RDS(on) 2 = 36 mΩ MAX. (VGS = 4.5 V, ID = 15 A ) • Low input capacitance ⎯ Ciss = 13

N0600N Datasheet - MOS FIELD EFFECT TRANSISTOR

N0600N   N0600N  
80 pF TYP. (VDS = 10 V, VGS = 0 V) Orde ring Information Part No. N0600N-S17-AY ∗1 Lead Plating Pure Sn (Tin) Packin g Tube 50p/tube Package Isolated TO-220 typ. 2.2 g Note: ∗1. Pb-free (This product does not contain Pb in the exte rnal electrode and other parts.) Absol ute Maximum Ratings (TA = 25°C) Item D rain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Dr








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