Preliminary Data Sheet
N0600N
MOS FIELD EFFECT TRANSISTOR
Description
R07DS0220EJ0100 Rev.1.00 Jan 25, 2011
The N0600...
Preliminary Data Sheet
N0600N
MOS FIELD EFFECT
TRANSISTOR
Description
R07DS0220EJ0100 Rev.1.00 Jan 25, 2011
The N0600N is N-channel MOS Field Effect
Transistor designed for high current switching applications.
Features
Low on-state resistance ⎯ RDS(on)1 = 25 mΩ MAX. (VGS =10 V, ID = 15 A) ⎯ RDS(on)2 = 36 mΩ MAX. (VGS = 4.5 V, ID = 15 A) Low input capacitance ⎯ Ciss = 1380 pF TYP. (VDS = 10 V, VGS = 0 V)
Ordering Information
Part No. N0600N-S17-AY ∗1 Lead Plating Pure Sn (Tin) Packing Tube 50p/tube Package Isolated TO-220 typ. 2.2 g
Note: ∗1. Pb-free (This product does not contain Pb in the external electrode and other parts.)
Absolute Maximum Ratings (TA = 25°C)
Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) ∗1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current ∗2 Single Avalanche Energy ∗2 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS Ratings 60 ±20 ±30 ±60 20 2.0 150 −55 to +150 9.2 12.5 Unit V V A A W W °C °C A mJ
Thermal Resistance
Channel to Case (Drain) Thermal Resistance 2 Channel to Ambient Thermal Resistance ∗ Rth(ch-C) Rth(ch-A) 6.25 62.5 °C/W °C/W
Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1% ∗ 2. Starting Tch = 25°C, RG = 25 Ω, VDD = 30 V, VGS = 20 → 0 V
R07DS0220EJ0100 Rev.1.00 Jan 25, 2011
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/
N0600N
Chapter Title
Electrical Character...