Preliminary Data Sheet
N0601N
N-CHANNEL MOSFET FOR SWITCHING
Description
R07DS0557EJ0100 Rev.1.00 Nov 07, 2011
The N0601N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Low on-state resistance RDS (on) = 4.2 mΩ MAX. (VGS = 10 V, ID = 50 A) Low input capacitance Ciss = 7730 pF TYP. (VDS = 25 V, VGS ...
