Preliminary Data Sheet
N0601N
N-CHANNEL MOSFET FOR SWITCHING
Description
R07DS0557EJ0100 Rev.1.00 Nov 07, 2011
The N0601N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Low on-state resistance RDS (on) = 4.2 mΩ MAX. (VGS = 10 V, ID = 50 A) • Low input capacitance Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V) • High current ID(DC) = ±100 A • RoHS Compliant
Ordering Information
Part No. N0601N-ZK-E1-AY ∗1 N0601N-ZK-E2-AY ∗1 Lead Plating Pur.