N0603N

Preliminary Data Sheet N0603N N-CHANNEL MOSFET FOR SWITCHING Description R07DS0559EJ0100 Rev.1.00 Nov 07, 2011 The N0603N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS (on) = 4.6 mΩ MAX. (VGS = 10 V, ID = 50 A) Low input capacitance Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V) High current ID(DC) = ±100 A RoHS Compliant Ordering Information Part No. N0603N-S23-AY ∗1 Lead Plating Pure Sn (Tin) Packing Tube 50 p/tube Package TO-262 1.8 g TYP. Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.) Absolute Maximum Ratings (TA = 25°C, all terminals are connected) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) ∗1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current ∗2 Single Avalanche Energy ∗2 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS Ratings 60 ±20 ±100 ±400 156 1.5 150 −55 to +150 55 300 Unit V V A A W W °C °C A mJ Thermal Resistance Channel to Case (Drain) Thermal Resistance 2 Channel to Ambient Thermal Resistance ∗ Rth(ch-C) Rth(ch-A) 0.80 83.3 °C/W °C/W Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1% ∗ 2. Starting Tch = 25°C, RG = 25 Ω, VDD = 30 V, VGS = 20 → 0 V, L = 100 μH R07DS0559EJ0100 Rev.1.00 Nov 07, 2011 Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ N0603N Chapter Title El...