RJK0230DPA

Preliminary Datasheet RJK0230DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0541EJ0110 High Speed Power Switching Rev.1.10 Sep 12, 2011 Features      Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DD-B (Package name: WPAK-D(3)) 2 3 4 D1 D1 D1 9 S1/D2 5 6 7 8 5 6 7 8 1 G1 8 G2 9 4 3 2 1 4 S2 S2 S2 5 6 7 3 2 1 (Bottom View) 1, 8 Gate 2, 3, 4, 9 Drain 5, 6, 7, 9 Source MOS1 MOS2 and Schottky Barrier Diode Absolute Maximum Ratings (Ta = 25°C) Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse) IDR IAP Note 2 EAR Note 2 Pch Note3 Tch Tstg Note1 MOS1 25 ±20 20 80 20 12 18 15 150 –55 to +150 MOS2 25 ±12 50 200 50 23 66 35 150 –55 to +150 Unit V V A A A A mJ W °C °C Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tch = 25C, Rg  50  3. Tc=25C R07DS0541EJ0110 Rev.1.10 Sep 12, 2011 Page 1 of 10 Free Datasheet http://www.datasheet4u.com/ RJK0230DPA Preliminary Electrical Characteristics MOS1 (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate R...