RJK0243DNS

Preliminary Datasheet RJK0243DNS 25V, 25A, 9.6mΩmax. N Channel Power MOS FET High Speed Power Switching Features Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free R07DS1074EJ0110 Rev1.10 Mar 28, 2013 Outline RENESAS Package code: PWSN0008JB-A (Package name: HWSON-8) 5 6 7 8 D D D D 5 6 7 8 4 G 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAS Note 2 Pch Note3 θch-c Note3 Tch Tstg Ratings 25 +10,-8 25 100 25 17 36 20 6.25 150 –55 to +150 Unit V V A A A A mJ W °C/W °C °C R07DS1074EJ0110 Rev1.10 Mar 28, 2013 Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ RJK0243DNS Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain c...