Preliminary Datasheet
RJK03A04DPA
Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1828-0210 Power Switching Rev.2.10
May 13, 2010
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.9 m typ. (at VGS = 10 V) Pb-free Halogen-free
Outline
RENESAS Pack...
