RJK03C2DPB

Preliminary RJK03C2DPB Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1831-0200 Power Switching Rev.2.00 Sep 29, 2009 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.9 mΩ typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 6 7 8 D D D D 5 4 4 G 3 12 1, 2, 3 4 5 Source Gate Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C Symbol VDSS VGSS ID ID(pulse) IDR IAP Note 2 EAR Note 2 Pch Note3 θch-C Tch Tstg Note1 Ratings 30 ±20 55 220 55 25 62.5 60 2.09 150 –55 to +150 Unit V V A A A A mJ W °C/W °C °C REJ03G1831-0200 Rev.2.00 Sep 29, 2009 Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ RJK03C2DPB Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to sourc...