AUIRF7319Q

AUTOMOTIVE MOSFET PD - 96364B HEXFET® Power MOSFET Features l l l l l l l AUIRF7319Q N-Ch P-Ch -30V V(BR)DSS RDS(on) typ. 30V Advanced Planar Technology Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Automotive [Q101] Qualified* Lead-Free, RoHS Compliant S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 2 3 4 7 6 5 D1 D1 D2 D2 0.023Ω 0.042Ω P-CHANNEL MOSFET max. 0.029Ω 0.058Ω ID 6.5A -4.9A Top View Description Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. SO-8 G D S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any oth...