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AUIRFB8407 Dataheets PDF



Part Number AUIRFB8407
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet AUIRFB8407 DatasheetAUIRFB8407 Datasheet (PDF)

AUTOMOTIVE GRADE AUIRFB8407 AUIRFS8407 AUIRFSL8407 HEXFET® Power MOSFET D Features Advanced Process Technology l New Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * l G S Description 40V typ. 1.4mΩ (SMD version) max 1.8mΩ ID (Silicon Limited) 250A ID (Package Limited) D D VDSS RDS(on) c Applications l l Specifically designed for Automotive applications, this HEXFET® Pow.

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AUTOMOTIVE GRADE AUIRFB8407 AUIRFS8407 AUIRFSL8407 HEXFET® Power MOSFET D Features Advanced Process Technology l New Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * l G S Description 40V typ. 1.4mΩ (SMD version) max 1.8mΩ ID (Silicon Limited) 250A ID (Package Limited) D D VDSS RDS(on) c Applications l l Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and wide variety of other applications. 195A D G D S G S G D S Electric Power Steering (EPS) Battery Switch l Start/Stop Micro Hybrid l Heavy Loads l DC-DC Applications Ordering Information Base part number Package Type AUIRFB8407 AUIRFSL8407 AUIRFS8407 AUIRFS8407 TO-220 TO-262 D2Pak D2Pak TO-220AB AUIRFB8407 G D2Pak AUIRFS8407 D TO-262 AUIRFSL8407 S Gate Drain Source Standard Pack Form Tube Tube Tube Tape and Reel Left Quantity 50 50 50 800 Complete Part Number AUIRFB8407 AUIRFSL8407 AUIRFS8407 AUIRFS8407TRL Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Symbol Parameter Max. 250 180 195 ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw ™ l Units A d 1000 1.5 230 W W/°C V °C ± 20 -55 to + 175 300 10lbf in (1.1N m) 350 500 See Fig. 14, 15, 22a, 22b mJ A mJ x x Avalanche Characteristics EAS (Thermally limited) EAS (tested) IAR EAR Single Pulse Avalanche Energy e Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy Ãd Ãe d HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ 1 www.irf.com © 2013 International Rectifier April 25, 2013 Free Datasheet http://www.datasheet4u.com/ AUIRFB/S/SL8407 Static @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS ΔV(BR)DSS /ΔTJ RDS(on) SMD RDS(on) TO-220 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Internal Gate Resistance Min. 40 ––– ––– ––– 2.0 ––– ––– ––– ––– ––– Typ. ––– 0.029 1.4 1.6 3.0 ––– ––– ––– ––– 2.2 Max. ––– ––– 1.8 2.0 4.0 1.0 150 100 -100 ––– Units V V/°C mΩ V μA nA Ω Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1mA VGS = 10V, ID = 100A VGS = 10V, ID = 100A VDS = VGS, ID = 150μA VDS = 40V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V d VGS(th) IDSS IGSS RG Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Crss Coss eff. (ER) Coss eff. (TR) Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Total Gate Charge Sync. (Qg - Qgd) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Energy Related) Effective Output Capacitance (Time Related) Min. 160 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 150 41 51 99 19 70 78 53 7330 1095 745 1310 1735 Max. ––– 225 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Units S nC Conditions VDS = 10V, ID = 100A ID = 100A VDS =20V VGS = 10V ID = 100A, VDS =20V, VGS = 10V VDD = 20V ID = 30A RG = 2.7Ω VGS = 10V VGS = 0V VDS = 25V ƒ = 1.0 MHz, See Fig. 5 VGS = 0V, VDS = 0V to 32V , See Fig. 11 VGS = 0V, VDS = 0V to 32V g ns pF g h ià i h Diode Characteristics Symbol IS ISM VSD dv/dt trr Qrr IRRM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time M.


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