Power MOSFET
AUIRFP2907Z
AUTOMOTIVE GRADE HEXFET® Power MOSFET
Features
● ● ● ● ● ● ●
D
PD - 97550
Advanced Process Technology Ultr...
Description
AUIRFP2907Z
AUTOMOTIVE GRADE HEXFET® Power MOSFET
Features
● ● ● ● ● ● ●
D
PD - 97550
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
V(BR)DSS RDS(on) max. ID
75V 4.5mΩ 170A
G S
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
D
G
D
S
TO-247AC
G D S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC =...
Similar Datasheet