AUIRFU120Z

PD - 96345 AUTOMOTIVE MOSFET Features l l l l l l l AUIRFR120Z AUIRFU120Z HEXFET® Power MOSFET V(BR)DSS 100V RDS(on) typ. 150mΩ 190mΩ 8.7A D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D G S max. ID Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. D G D S G D S D-Pak AUIRFR120Z G D I-Pak AUIRFU120Z S Absolute Maximum Ratings Gate Drain Source Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Parameter I...