Power MOSFET
AUTOMOTIVE GRADE
PD -96398A
Features Advanced Process Technology l Low On-Resistance l 175°C Operating Temperature l F...
Description
AUTOMOTIVE GRADE
PD -96398A
Features Advanced Process Technology l Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified *
l
AUIRFR4615 AUIRFU4615
D
HEXFET® Power MOSFET
G S
VDSS RDS(on) typ. max. ID
D D
150V 34m: 42m: 33A
Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
G
S G
G
D
S
DPak AUIRFR4615 D
IPAK AUIRFU4615 S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C ID @ T...
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