2SA1786

Ordering number:EN3512B Features · Large current capacity (IC=2A). · High breakdown voltage (VCEO≥400V). 2SA1786 : PNP Epitaxial Planar Silicon Transistor 2SC4646 : NPN Triple Diffused Planar Silicon Transistor 2SA1786/2SC4646 High Voltage Driver Applications Package Dimensions unit:mm 2064 [2SA1786/2SC4646] ( ) : 2SA1786 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Colletor Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) VCB=(–)300V, IE=0 VEB=(–)4V, IC=0 VCE=(–)10V, IC=(–)100mA VCE=(–)10V, IC=(–)100mA VCB=(–)30V, f=1MHz IC=(–)500mA, IB=(–)50mA IC=(–)500mA, IB=(–)50mA * : The 2SA1786/2SC4646 are classified by 100mA hFE as follows : 40 C 80 60 D 120 100 E 200 E : Emitter C : Collector B : Base SANYO : NMP Ratings (–)400 (–)400 (–)5 (–)2 (–)4 1 150 –55 to +150 Unit V V V A A W ˚C ˚C Ratings min typ 40* (40)60 (25)15 max (–)1.0 (–)1.0 200* (–)1.0 (–)1.0 Unit µA µA MHz pF V V Any and all SANYO products described or contained herein do not have specifications that can handle applica...