Power MOSFET
AUTOMOTIVE GRADE
PD - 97681
AUIRFR4620
Features
● ● ● ● ● ● ● ●
HEXFET® Power MOSFET
Advanced Process Technology Ult...
Description
AUTOMOTIVE GRADE
PD - 97681
AUIRFR4620
Features
● ● ● ● ● ● ● ●
HEXFET® Power MOSFET
Advanced Process Technology Ultra Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
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G S
VDSS RDS(on) typ. max. ID
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200V 64m: 78m: 24A
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
S G
D-Pak AUIRFR4620
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
ID @ TC = 25°C ID @ TC = 10...
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