AUIRL3705ZS

PD - 96345 AUTOMOTIVE GRADE Features l l l l l l l l HEXFET® Power MOSFET D AUIRL3705Z AUIRL3705ZS AUIRL3705ZL V(BR)DSS RDS(on) typ. 55V 6.5mΩ 8.0mΩ 86Al 75A Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * G S max. ID (Silicon Limited) ID (Package Limited) Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. TO-220AB AUIRL3705Z G D2 Pak AUIRL3705ZS D TO-262 AUIRL3705ZL S Absolute Maximum Ratings Gate Drain Source Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. A...