SO T2
BSS138BK
60 V, 360 mA N-channel Trench MOSFET
Rev. 1 — 4 August 2011 Product data sheet
1. Product profile
1.1 G...
SO T2
BSS138BK
60 V, 360 mA N-channel Trench MOSFET
Rev. 1 — 4 August 2011 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect
Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
3
1.2 Features and benefits
Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 1.5 kV AEC-Q101 qualified
1.3 Applications
Relay driver High-speed line driver Low-side loadswitch Switching circuits
1.4 Quick reference data
Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 10 V; Tamb = 25 °C VGS = 10 V; ID = 350 mA; Tj = 25 °C
[1]
Conditions Tj = 25 °C
Min -20 -
Typ 1
Max 60 20 360 1.6
Unit V V mA Ω
Static characteristics
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
Free Datasheet http://www.datasheet4u.com/
NXP Semiconductors
BSS138BK
60 V, 360 mA N-channel Trench MOSFET
2. Pinning information
Table 2. Pin 1 2 3 Pinning information Symbol Description G S D gate source drain
1 2
G
Simplified outline
3
Graphic symbol
D
SOT23 (TO-236AB)
S
017aaa255
3. Ordering information
Table 3. Ordering information Package Name BSS138BK TO-236AB Description plastic surface-mounted package; 3 leads Version SOT23 Type number
4. Marking
Table 4. BSS138BK
[1] % = placeh...