2SA1802

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1802 Strobe Flash Applications Medium Power Amplifier Applications 2SA1802 Unit: mm · Excellent hFE linearity : hFE (1) = 200 to 600 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = −2 V, IC = −3 A) · Low collector saturation voltage : VCE (sat) = −0.5 V (max) (IC = −3 A, IB = −60 mA) · Complementary to 2SC4681 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulsed (Note 1) Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg −30 −30 −10 −6 −3 −6 −0.5 1.0 10 150 −55 to 150 V V V A A W °C °C Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max) JEDEC ― JEITA ― TOSHIBA 2-7B1A Weight: 0.36 g (typ.) 1 2002-08-13 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol Test Condition ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE fT Cob VCB = −20 V, IE = 0 VEB = −6 V, IC = 0 IC = −10 mA, IB = 0 VCE = −2 V, IC = −0.5 A VCE = −2 V, IC = −3 A IC = −3 A, IB = −60 mA VCE = −2 V, IC = −3 A VCE = −2 V, IC = −0.5 A VCB = −10 V, IE = 0, f = 1 MHz Marking 2SA1...