2SA1806

Transistor 2SA1806 Silicon PNP epitaxial planer type For high speed switching Unit: mm 1.6±0.15 s Features q q q 0.4 0.8±0.1 0.4 0.2–0.05 0.15–0.05 +0.1 High-speed switching. Low collector to emitter saturation voltage VCE(sat). SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) Ratings –15 –15 –4 –100 –50 125 125 –55 ~ +125 Unit V V V mA mA mW ˚C ˚C 1.6±0.1 1.0±0.1 0.5 1 0.5 3 2 0.45±0.1 0.3 0.75±0.15 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1:Base 2:Emitter 3:Collector EIAJ:SC–75 SS–Mini Type Package Marking symbol : AK s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Turn-off time Storage time (Ta=25˚C) Symbol ICBO IEBO hFE1 hFE2 VCE(sat) fT Cob ton toff tstg * Conditions VCB = –8V, IE = 0 VEB = –3V, IC = 0 VCE = –1V, IC = –10mA VCE = –1V, IC = –1mA IC = –10mA, IB = – 1mA VCB = –10V, IE = 10mA, f = 200MHz VCB = –5V, IE = 0, f = 1MHz (Note 1) Next page (Note 1) Next page (Note 1) Next page min typ 0 to 0.1 0.2±0.1 max – 0.1 – 0.1 +0.1 s Absolute Maximum Ratings Unit µA µA 50 30 – 0.1 80...