2SA1816

Transistor 2SA1816(Tentative) Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification 4.0±0.2 3.0±0.2 Unit: mm s Features q High collector to emitter voltage VCEO. 15.6±0.5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) 0.7±0.1 Ratings –150 –150 –5 –100 –50 300 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 1:Emitter 2:Collector 3:Base 1 2 3 1.27 1.27 2.54±0.15 EIAJ:SC–72 New S Type Package s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Noise voltage (Ta=25˚C) Symbol ICBO VCEO VEBO hFE fT Cob NV *1 Conditions VCB = –100V, IE = 0 IC = –100µA, IB = 0 IE = –10µA, IC = 0 VCE = –5V, IC = –10mA IC = –30mA, IB = –3mA VCB = –10V, IE = 10mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz VCE = –10V, IC = – 1mA, GV = 80dB Rg = 100kΩ, Function = FLAT min typ max –1 2.0±0.2 marking +0.2 0.45–0.1 Unit µA V V –150 –5 90 450 –1 200 5 150 VCE(sat) V MHz pF mV *1h FE Rank classification Q 90 ~ 155 R 130 ~ 220 S 185 ~ 330 T 260 ~ 450 Rank hFE 1 ...