2SA1823

Ordering number:EN3870 PNP Epitaxial Planar Silicon Transistor 2SA1823 20V/8A Switching Applications Features · Adoption of MBIT process. · Low saturation voltage. · Fast swicthing speed. · Large current capacity. · It is possible to make appliances more compact because it’s height on board is 9.5mm. · Meets radial taping. Package Dimensions unit:mm 2084 [2SA1823] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol Conditions ICBO IEBO hFE1 hFE2 fT Cob VCE(sat) VBE(sat) VCB=–20V, IE=0 VEB=–4V, IC=0 VCE=–2V, IC=–500mA VCE=–2V, IC=–6A VCE=–2V, IC=–500mA VCB=–10V, f=1MHz IC=–5A, IB=–250mA IC=–5A, IB=–250mA E : Emitter C : Collector B : Base SANYO : FLP Ratings –25 –20 –5 –8 –12 –1.5 1.5 150 –55 to +150 Unit V V V A A A W ˚C ˚C Ratings min typ 100* 60 200 85 –220 –1 max –1 –1 400* –400 –1.3 Unit µA µA MHz pF V V Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reli...