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2SA1831 Dataheets PDF



Part Number 2SA1831
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description PNP Triple Diffused Planar Silicon Transistors
Datasheet 2SA1831 Datasheet2SA1831 Datasheet (PDF)

Ordering number:EN3686A PNPTriple Diffused Planar Silicon Transistors 2SA1831 High-Voltage Amplifier, High-Voltage Switching Applications Features · High breakdown voltage (VCEO min=–800V). · Small Cob (Cob typ=1.6pF). · High reliabirity (Adoption of HVP processes). Package Dimensions unit:mm 2010B [2SA1831] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse.

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Ordering number:EN3686A PNPTriple Diffused Planar Silicon Transistors 2SA1831 High-Voltage Amplifier, High-Voltage Switching Applications Features · High breakdown voltage (VCEO min=–800V). · Small Cob (Cob typ=1.6pF). · High reliabirity (Adoption of HVP processes). Package Dimensions unit:mm 2010B [2SA1831] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol Conditions ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) VCB=–800V, IE=0 VEB=–5V, IC=0 VCE=–5V, IC=–2mA VCE=–10V, IC=–2mA VCB=–100V, f=1MHz IC=–1mA, IB=–200µA IC=–1mA, IB=–200µA JEDEC : TO-220AB EIAJ : SC-46 E : Emitter C : Collector B : Base Ratings –800 –800 –7 –20 –60 1.75 150 –55 to +150 Unit V V V mA mA W ˚C ˚C Ratings min typ 20 10 1.6 max –1 –1 50 –1 –1.5 Unit µA µA MHz pF V V Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 91098HA (KT)/D251MH/5201MH, KOTO No.3686–1/3 Parameter Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Votage Thermal Resistance 2SA1831 Symbol Conditions V(BR)CBO V(BR)CEO V(BR)EBO Rth(j-c) IC=(–)100µA, IE=0 IC=(–)1mA, RBE=∞ IE=(–)100µA, IC=0 Junction-Case Ratings min typ –800 –800 –7 max 8.3 Unit V V V ˚C/W No.3686–2/3 2SA1831 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer s.


2SA1830 2SA1831 2SA1832


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