Document
Ordering number:EN3686A
PNPTriple Diffused Planar Silicon Transistors
2SA1831
High-Voltage Amplifier, High-Voltage Switching Applications
Features
· High breakdown voltage (VCEO min=–800V). · Small Cob (Cob typ=1.6pF). · High reliabirity (Adoption of HVP processes).
Package Dimensions
unit:mm 2010B
[2SA1831]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage
Symbol
Conditions
ICBO IEBO hFE
fT Cob VCE(sat) VBE(sat)
VCB=–800V, IE=0 VEB=–5V, IC=0 VCE=–5V, IC=–2mA VCE=–10V, IC=–2mA VCB=–100V, f=1MHz IC=–1mA, IB=–200µA IC=–1mA, IB=–200µA
JEDEC : TO-220AB EIAJ : SC-46
E : Emitter C : Collector B : Base
Ratings –800 –800 –7 –20 –60 1.75 150
–55 to +150
Unit V V V mA mA W ˚C ˚C
Ratings min typ
20 10 1.6
max –1 –1 50
–1 –1.5
Unit
µA µA
MHz pF V V
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/D251MH/5201MH, KOTO No.3686–1/3
Parameter
Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Votage Thermal Resistance
2SA1831
Symbol
Conditions
V(BR)CBO V(BR)CEO V(BR)EBO
Rth(j-c)
IC=(–)100µA, IE=0 IC=(–)1mA, RBE=∞ IE=(–)100µA, IC=0 Junction-Case
Ratings min typ –800 –800
–7
max 8.3
Unit
V V V ˚C/W
No.3686–2/3
2SA1831
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer s.