2SA1859/1859A
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4883/A) sAbsolute maximum ratings (Ta=25°C)...
2SA1859/1859A
Silicon
PNP Epitaxial Planar
Transistor (Complement to type 2SC4883/A) sAbsolute maximum ratings (Ta=25°C)
Symbol 2SA1859 2SA1859A VCBO VCEO VEBO IC IB PC Tj Tstg –150 –150 –6 –2 –1 20(Tc=25°C) 150 –55 to +150 –180 –180 Unit V V V A A W °C °C
Application : Audio Output Driver and TV Velocity-modulation
(Ta=25°C)
sElectrical Characteristics
Symbol ICBO VCB= IEBO V(BR)CEO hFE VCE(sat) fT COB VEB=–6V IC=–10mA VCE=–10V, IC=–0.7A IC=–0.7A, IB=–70mA VCE=–12V, IE=0.7A VCB=–10V, f=1MHz Conditions
External Dimensions FM20(TO220F)
4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5
2SA1859 2SA1859A –10max –150 –10max –180min –150min 60 to 240 –1.0max 60typ 30typ –180
Unit
µA µA
V V MHz pF
13.0min 16.9±0.3 8.4±0.2
V
1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2
sTypical Switching Characteristics (Common Emitter)
VCC (V) –20 RL (Ω) 20 IC (A) –1 VBB1 (V) –10 VBB2 (V) 5 IB1 (mA) –100 IB2 (mA) 100 ton (µs) 0.5typ tstg (µs) 1.0typ tf (µs) 0.5typ
2.54
3.9 B C E
I C – V CE Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (sa t) (V ) –2
A
V CE ( sat ) – I B Characteristics (Typical)
–3
I C – V BE Temperature Characteristics (Typical)
–2 (V C E =–4V)
A
0m
A
00
–1
–6
–3
–1
5mA
0m
m
Collector Current I C (A)
–10 mA
–2
Collector Current I C (A)
–1
I B =–5mA
–1
mp)
±0.2
0.8±0.2
a b
ø3.3±0.2
Weight : Approx 6.5g a. Type No. b. Lot No.
p)
Cas
–1
˚C (
(Cas
I C =–2A –0.5A 0 –2 –5 –10 –1A –50 –100 –500 –1000 0 0
0
0
–2
...