Document
BSS316N
OptiMOS™2 Small-Signal-Transistor
Features • N-channel • Enhancement mode • Logic level (4.5V rated) • Avalanche rated • Qualified according to AEC Q101 • 100%lead-free; RoHS compliant
Product Summary V DS R DS(on),max V GS=10 V V GS=4.5 V ID 30 160 280 1.4 A V mΩ
PG-SOT23
3
1 2
Type BSS316N
Package SOT23
Tape and Reel Information L6327: 3000 pcs/ reel
Marking SYs
Lead Free Yes
Packing Non dry
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T A=25 °C T A=70 °C Pulsed drain current Avalanche energy, single pulse I D,pulse E AS T A=25 °C I D=1.4 A, R GS=25 Ω Value 1.4 1.1 5.6 3.7 mJ Unit A
Reverse diode d v /dt
dv /dt
I D=1.4 A, V DS=16 V, di /dt =200 A/µs, T j,max=150 °C
6
kV/µs
Gate source voltage Power dissipation Operating and storage temperature ESD Class Soldering Temperature IEC climatic category; DIN IEC 68-1
V GS P tot T j, T stg JESD22-A114 -HBM T A=25 °C
±20 0.5 -55 ... 150 0 (<250V) 260 °C 55/150/56
V W °C
Rev 2.2
page 1
2010-03-25
Free Datasheet http://www.datasheet4u.com/
BSS316N
Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - ambient R thJA
1)
Values typ. max.
Unit
minimal footprint
-
-
250
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current V (BR)DSS V GS=0 V, I D=250 µA V GS(th) I DSS V DS=VGS , I D=3.7 µA V DS=30 V, V GS=0 V, T j=25 °C V DS=30 V, V GS=0 V, T j=150 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=30 V, V DS=0 V V GS=4.5 V, I D=1.1 A V GS=10 V, I D=1.4 A Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=1.1 A 30 1.2 1.6 2.0 1 µA V
-
191 119 2.3
100 100 280 160 S nA mΩ
Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70µm thick and 20mm long; they are present on both sides of the PCB.
1)
Rev 2.2
page 2
2010-03-25
Free Datasheet http://www.datasheet4u.com/
BSS316N
Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge IS I S,pulse V SD t rr Q rr T A=25 °C V GS=0 V, I F=1.4 A, T j=25 °C V R=10 V, I F=1.4 A, di F/dt =100 A/µs 0.8 9.1 2.6 0.5 5.6 1.1 V ns nC A Q gs Q gd Qg V plateau V DD=15 V, I D=1.4 A, V GS=0 to 5 V 0.3 0.2 0.6 3.4 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=15 V, V GS=10 V, I D=1.4 A, R G=6 Ω V GS=0 V, V DS=15 V, f =1 MHz 71 26 5 3.4 2.3 5.8 1 94 35 7 ns pF Values typ. max. Unit
Rev 2.2
page 3
2010-03-25
Free Datasheet http://www.datasheet4u.com/
BSS316N
1 Power dissipation P tot=f(T A) 2 Drain current I D=f(T A); V GS≥10 V
1.6 0.5
1.2 0.375
P tot [W]
I D [A]
0 40 80 120
0.8
0.25
0.125
0.4
0
0 0 20 40 60 80 100 120 140 160
T A [°C]
T A [°C]
3 Safe operating area I D=f(V DS); T A=25 °C; D =0 parameter: t p
101
1 µs 100 µs 1 ms 10 ms 10 µs
4 Max. transient thermal impedance Z thJA=f(t p) parameter: D =t p/T
103
100
102
0.5
10-1
Z thJA [K/W]
0.2
I D [A]
0.1 0.05
DC
10
1
0.02 0.01 single pulse
10
-2
10-3 10
-1
100 10
0
10
1
10
2
10-5
10-4
10-3
10-2
10-1
100
101
102
V DS [V]
t p [s]
Rev 2.2
page 4
2010-03-25
Free Datasheet http://www.datasheet4u.com/
BSS316N
5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS
4
6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS
400
10 V
4.5 V 4V
350
3
300
3.5 V
2
R DS(on) [mΩ ]
250
4V
I D [A]
200
4.5 V 5V
3.5 V
150
7V 10 V
1
3.3 V
100
3V 2.8 V
50
0 0 0.5 1 1.5 2 2.5 3
0 0 1 2 3 4
V DS [V]
I D [A]
7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max
8 Typ. forward transconductance g fs=f(I D); T j=25 °C
4
6
3 4
2
g fs [S]
2
150 °C 25 °C
I D [A]
1
0 0 1 2 3 4 5
0 0 2 4 6 8
V GS [V]
I D [A]
Rev 2.2
page 5
2010-03-25
Free Datasheet http://www.datasheet4u.com/
BSS316N
9 Drain-source on-state resistance R DS(on)=f(T j); I D=1.4 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V DS=VGS; I D=3.7 µA parameter: I D
300 2.8
250
2.4
2 200
98 %
R DS(on) [mΩ ]
98 %
150
typ
V GS(th) [V]
1.6
typ
1.2
2%
100 0.8 50
0.4
0 -60 -20 20 60 100 140
0 -60 -20 20 60 100 140
T j [°C]
T j [°C]
11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C
12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j
102
Ciss
101
Coss
100
150 °C
25 °C
C [pF]
101
Crss
I F [A]
10-1
10-2
150 °C, 98% 25 °C, 98%
100 0 5 10 15 20
10-3 0 0.4 0.8 1.2 1.6
V DS [V]
V SD [V]
Rev 2.2
page 6
2010-03-25
Free Datasheet http://www.datasheet4u.com/
BSS316N
13 Avalanche characteristic.