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BSS316N Dataheets PDF



Part Number BSS316N
Manufacturers Infineon
Logo Infineon
Description Small-Signal-Transistor
Datasheet BSS316N DatasheetBSS316N Datasheet (PDF)

BSS316N OptiMOS™2 Small-Signal-Transistor Features • N-channel • Enhancement mode • Logic level (4.5V rated) • Avalanche rated • Qualified according to AEC Q101 • 100%lead-free; RoHS compliant Product Summary V DS R DS(on),max V GS=10 V V GS=4.5 V ID 30 160 280 1.4 A V mΩ PG-SOT23 3 1 2 Type BSS316N Package SOT23 Tape and Reel Information L6327: 3000 pcs/ reel Marking SYs Lead Free Yes Packing Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain.

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BSS316N OptiMOS™2 Small-Signal-Transistor Features • N-channel • Enhancement mode • Logic level (4.5V rated) • Avalanche rated • Qualified according to AEC Q101 • 100%lead-free; RoHS compliant Product Summary V DS R DS(on),max V GS=10 V V GS=4.5 V ID 30 160 280 1.4 A V mΩ PG-SOT23 3 1 2 Type BSS316N Package SOT23 Tape and Reel Information L6327: 3000 pcs/ reel Marking SYs Lead Free Yes Packing Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T A=25 °C T A=70 °C Pulsed drain current Avalanche energy, single pulse I D,pulse E AS T A=25 °C I D=1.4 A, R GS=25 Ω Value 1.4 1.1 5.6 3.7 mJ Unit A Reverse diode d v /dt dv /dt I D=1.4 A, V DS=16 V, di /dt =200 A/µs, T j,max=150 °C 6 kV/µs Gate source voltage Power dissipation Operating and storage temperature ESD Class Soldering Temperature IEC climatic category; DIN IEC 68-1 V GS P tot T j, T stg JESD22-A114 -HBM T A=25 °C ±20 0.5 -55 ... 150 0 (<250V) 260 °C 55/150/56 V W °C Rev 2.2 page 1 2010-03-25 Free Datasheet http://www.datasheet4u.com/ BSS316N Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - ambient R thJA 1) Values typ. max. Unit minimal footprint - - 250 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current V (BR)DSS V GS=0 V, I D=250 µA V GS(th) I DSS V DS=VGS , I D=3.7 µA V DS=30 V, V GS=0 V, T j=25 °C V DS=30 V, V GS=0 V, T j=150 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=30 V, V DS=0 V V GS=4.5 V, I D=1.1 A V GS=10 V, I D=1.4 A Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=1.1 A 30 1.2 1.6 2.0 1 µA V - 191 119 2.3 100 100 280 160 S nA mΩ Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70µm thick and 20mm long; they are present on both sides of the PCB. 1) Rev 2.2 page 2 2010-03-25 Free Datasheet http://www.datasheet4u.com/ BSS316N Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge IS I S,pulse V SD t rr Q rr T A=25 °C V GS=0 V, I F=1.4 A, T j=25 °C V R=10 V, I F=1.4 A, di F/dt =100 A/µs 0.8 9.1 2.6 0.5 5.6 1.1 V ns nC A Q gs Q gd Qg V plateau V DD=15 V, I D=1.4 A, V GS=0 to 5 V 0.3 0.2 0.6 3.4 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=15 V, V GS=10 V, I D=1.4 A, R G=6 Ω V GS=0 V, V DS=15 V, f =1 MHz 71 26 5 3.4 2.3 5.8 1 94 35 7 ns pF Values typ. max. Unit Rev 2.2 page 3 2010-03-25 Free Datasheet http://www.datasheet4u.com/ BSS316N 1 Power dissipation P tot=f(T A) 2 Drain current I D=f(T A); V GS≥10 V 1.6 0.5 1.2 0.375 P tot [W] I D [A] 0 40 80 120 0.8 0.25 0.125 0.4 0 0 0 20 40 60 80 100 120 140 160 T A [°C] T A [°C] 3 Safe operating area I D=f(V DS); T A=25 °C; D =0 parameter: t p 101 1 µs 100 µs 1 ms 10 ms 10 µs 4 Max. transient thermal impedance Z thJA=f(t p) parameter: D =t p/T 103 100 102 0.5 10-1 Z thJA [K/W] 0.2 I D [A] 0.1 0.05 DC 10 1 0.02 0.01 single pulse 10 -2 10-3 10 -1 100 10 0 10 1 10 2 10-5 10-4 10-3 10-2 10-1 100 101 102 V DS [V] t p [s] Rev 2.2 page 4 2010-03-25 Free Datasheet http://www.datasheet4u.com/ BSS316N 5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 4 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 400 10 V 4.5 V 4V 350 3 300 3.5 V 2 R DS(on) [mΩ ] 250 4V I D [A] 200 4.5 V 5V 3.5 V 150 7V 10 V 1 3.3 V 100 3V 2.8 V 50 0 0 0.5 1 1.5 2 2.5 3 0 0 1 2 3 4 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max 8 Typ. forward transconductance g fs=f(I D); T j=25 °C 4 6 3 4 2 g fs [S] 2 150 °C 25 °C I D [A] 1 0 0 1 2 3 4 5 0 0 2 4 6 8 V GS [V] I D [A] Rev 2.2 page 5 2010-03-25 Free Datasheet http://www.datasheet4u.com/ BSS316N 9 Drain-source on-state resistance R DS(on)=f(T j); I D=1.4 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V DS=VGS; I D=3.7 µA parameter: I D 300 2.8 250 2.4 2 200 98 % R DS(on) [mΩ ] 98 % 150 typ V GS(th) [V] 1.6 typ 1.2 2% 100 0.8 50 0.4 0 -60 -20 20 60 100 140 0 -60 -20 20 60 100 140 T j [°C] T j [°C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 102 Ciss 101 Coss 100 150 °C 25 °C C [pF] 101 Crss I F [A] 10-1 10-2 150 °C, 98% 25 °C, 98% 100 0 5 10 15 20 10-3 0 0.4 0.8 1.2 1.6 V DS [V] V SD [V] Rev 2.2 page 6 2010-03-25 Free Datasheet http://www.datasheet4u.com/ BSS316N 13 Avalanche characteristic.


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