Silicon Transistor. 2SA1881 Datasheet

2SA1881 Transistor. Datasheet pdf. Equivalent

Part 2SA1881
Description PNP/NPN Epitaxial Planar Silicon Transistor
Feature Ordering number:4661 PNP/NPN Epitaxial Planar Silicon Transistor 2SA1881/2SC4983 Low-Frequency Gene.
Manufacture Sanyo Semicon Device
Datasheet
Download 2SA1881 Datasheet

Ordering number:4661 PNP/NPN Epitaxial Planar Silicon Trans 2SA1881 Datasheet
Recommendation Recommendation Datasheet 2SA1881 Datasheet




2SA1881
Ordering number:4661
PNP/NPN Epitaxial Planar Silicon Transistor
2SA1881/2SC4983
Low-Frequency
General-Purpose Amplifier Applications
Features
· AF power amplifier, medium-speed switching, small-
sized motor drivers and LED drivers.
Features
· Large current capacity.
· Low collector-to-emitter saturation voltage.
· Very small-sized pakage permitting 2SA1881/
2SC4983-appied set to be made smaller and slimmer.
Package Dimensions
unit:mm
2018B
[2SA1881/2SC4983]
( ) : 2SA1881
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
ICBO
IEBO
hFE1
hFE2
fT
VCB=(–)12V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)50mA
VCE=(–)2V, IC=(–)800mA
VCE=(–)2V, IC=(–)50mA
Output Capacitance
Cob VCB=(–)10V, f=1MHz
1 : Base
2 : Emitter
3 : Collector
SANYO : CP
Ratings
(–)15
(–)15
(–)5
(–)1
(–)3
(–)200
250
150
–55 to +150
Unit
V
V
V
A
A
mA
mW
˚C
˚C
Ratings
min typ
135*
80
(300)
200
(15)10
max
(–)100
(–)100
600*
Unit
nA
nA
MHz
MHz
pF
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/51694TH (KOTO) A8-9412 No.4661–1/4



2SA1881
2SA1881/2SC4983
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Symbol
Conditions
VCE(sat)1
VCE(sat)2
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC=(–)5mA, IB=(–)0.5mA
IC=(–)500mA, IB=(–)25mA
IC=(–)500mA, IB=(–)25mA
IC=–10µA, IE=0
IC=–1mA, RBE=
IE=–10µA, IC=0
* : The 2SA1881/2SC4983 are classified by 50mA hFE as follows :
135 5 270 200 6 400 300 7 600
Marking : 2SA1881 : IS
2SC4983 : KN
Ratings
min typ
(–)10
(–)120
(–)0.9
(–)15
(–)15
(–)5
max
(–)25
(–)240
(–)1.2
Unit
mV
mV
V
V
V
V
No.4661–2/4





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