Document
CHA6558-99F
RoHS COMPLIANT
28-32GHz HPA 2W
GaAs Monolithic Microwave IC Description
The CHA6558-99F is a monolithic four stages GaAs high power amplifier, designed for Ka-Band applications. The circuit is dedicated to telecommunication and VSAT, SATCOM and is also well suited for a wide range of microwave applications and systems. It is developed on a robust 0.15µm gate length pHEMT process, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.
D1
D2
D3
G3
RF IN
G4
D4
RF OUT
G2
G3
Main Features
Linear gain (dB) / Output Power (dBm) & PAE (%) @ saturation (dBm)
■ Broadband performances: 28-32GHz ■ 21dB Linear Gain ■ 33dBm output power @3dB compression. ■ 23% PAE@ 3dB compression ■ DC bias: Vd=6Volt@Id=1.4A ■ Chip size 3.46x2.71x0.07mm
39 37 35 33 31 29 27 25
Pout @Saturation
PAE @Saturation
23
21 19
Linear Gain
17
15 28 29 30 Frequency (GHz) 31 32
Main Electrical Characteristics
Tamb.= +25°C Symbol Parameter Min Typ Max Unit Freq Frequency range 28 32 GHz Gain Linear Gain 21 dB Pout Output Power @3dB compression 33 dBm PAE Power added efficiency 23 % ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
Ref. DSCHA6558-QAG2251 - 07 Sep 12
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - BP46 - 91401 Orsay Cedex France Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
G1
Free Datasheet http://www.datasheet4u.com/
D3
G4
D4
CHA6558-99F
Electrical Characteristics
28-32GHz HPA 2W
Tamb = +25°C, Vd = +6V Vg adjusted for quiescent current =1.4A Symbol Parameter Min Typ Max Unit Freq Operating frequency range 28 32 GHz G Small signal gain 21 dB P1dB Output power @ 1dB compression 33.2 dBm Psat Saturated output power 33.4 dBm PAE Power added efficiency at saturation 23 % Rlin Input return loss -8 dB Rlout Output return loss -6 dB Id Supply quiescent drain current 1.4 A Id_sat Drain current @ saturation 1.8 A Vg Negative gate voltage (G1,G2,G3,G4 pads) ≈-0.5 V These values are representative of on test fixture measurements a bonding wire of typically 0.3nH at the RF ports.
Absolute Maximum Ratings (1)
Tamb.= +25°C Symbol Parameter Values Unit Cmp Gain compression level 5 dB Vd Drain bias voltage ( D1,D2 ,D3 ,D4) 7 V Id Supply quiescent current 1.6 A Vg Gate bias voltage -2 to -0.2 V (2) Pin Maximum peak input power overdrive +18 dBm (3) Tj Junction temperature 175 °C Ta Operating temperature range -40 to +85 °C Tstg Storage temperature range -55 to +150 °C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. (3) Thermal Resistance channel to ground paddle = 6.2°C/W for T= +85°C.
Typical Bias Conditions
Tamb.= +25°C Symbol Pad No Parameter Vd D1,D2,D3,D4 DC drain Voltage Id DC Drain current controlled with vg Vg G1,G2,G3,G4 DC gate Voltage (1) To be adjusted until to obtain Id:1.4A Values 6 1.4 ≈-0.5(1) Unit V A V
Ref. : DSCHA6558-QAG2251 - 07 Sep 12
2/10
Specifications subject to change without notice
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Free Datasheet http://www.datasheet4u.com/
28-32GHz HPA 2W
Tamb.= +25°C, Vd = +6V, Id = 1.4A
CHA6558-99F
Typical S parameters in test fixture Measurements
Linear Gain && RLosses versus Frequency Linear gain Rlosses versus Frequency
30 25
Linear Gain & Return losses (dB)
20 15 10 5 0 -5 -10 -15 -20 26 27 28 29 30 31 32 33 34
dBS21 dBS11 dBS22
35
36
Frequency (GHz)
Output Power @1dB compression & saturation versus frequency
Output Power @ saturation versus Frequency
39
Output Power @ saturation (dBm)
37 35 33 31
Pout @ saturation
29 27 25 28 29 30 31 32 33 Frequency (GHz)
Ref. DSCHA6558-QAG2251 - 07 Sep 12
3/10
Specifications subject to change without notice
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Free Datasheet http://www.datasheet4u.com/
CHA6558-99F
28-32GHz HPA 2W
Typical S parameters in test fixture Measurements
Tamb.= +25°C, Vd = +6V, Id = 1.4A Drain current @ saturation versus Frequency
2
Drain Current @ saturation (A)
1.9
1.8 1.7 1.6 1.5 1.4 1.3
1.2
1.1 1 28 29
Drain current @ Saturation
30
31
32
33
Frequency (GHz)
PAE @ saturation versus Frequency
Power added efficiency @ 1dB compression & saturation versus frequency
35 33 31 29 27 25 23 21 19 17 15 13 11 9 7 5 28 29
PAE (%) @ saturation
PAE @ saturation
30 31 Frequency (GHz)
32
33
Ref. : DSCHA6558-QAG2251 - 07 Sep 12
4/10
Specifications subject to change without notice
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Free Datasheet http://www.datasheet4u.com/
28-32GHz HPA 2W
CHA6558-99F
Typical Measurement in test fixture versus Temperature
Linear gain versus Frequency & Temperature
40 35 30 25
Linear Gain.