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CHA6558-99F Dataheets PDF



Part Number CHA6558-99F
Manufacturers United Monolithic Semiconductors
Logo United Monolithic Semiconductors
Description 28-32GHz HPA 2W
Datasheet CHA6558-99F DatasheetCHA6558-99F Datasheet (PDF)

CHA6558-99F RoHS COMPLIANT 28-32GHz HPA 2W GaAs Monolithic Microwave IC Description The CHA6558-99F is a monolithic four stages GaAs high power amplifier, designed for Ka-Band applications. The circuit is dedicated to telecommunication and VSAT, SATCOM and is also well suited for a wide range of microwave applications and systems. It is developed on a robust 0.15µm gate length pHEMT process, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip.

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CHA6558-99F RoHS COMPLIANT 28-32GHz HPA 2W GaAs Monolithic Microwave IC Description The CHA6558-99F is a monolithic four stages GaAs high power amplifier, designed for Ka-Band applications. The circuit is dedicated to telecommunication and VSAT, SATCOM and is also well suited for a wide range of microwave applications and systems. It is developed on a robust 0.15µm gate length pHEMT process, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. D1 D2 D3 G3 RF IN G4 D4 RF OUT G2 G3 Main Features Linear gain (dB) / Output Power (dBm) & PAE (%) @ saturation (dBm) ■ Broadband performances: 28-32GHz ■ 21dB Linear Gain ■ 33dBm output power @3dB compression. ■ 23% PAE@ 3dB compression ■ DC bias: Vd=6Volt@Id=1.4A ■ Chip size 3.46x2.71x0.07mm 39 37 35 33 31 29 27 25 Pout @Saturation PAE @Saturation 23 21 19 Linear Gain 17 15 28 29 30 Frequency (GHz) 31 32 Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Min Typ Max Unit Freq Frequency range 28 32 GHz Gain Linear Gain 21 dB Pout Output Power @3dB compression 33 dBm PAE Power added efficiency 23 % ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions! Ref. DSCHA6558-QAG2251 - 07 Sep 12 1/10 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - BP46 - 91401 Orsay Cedex France Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 G1 Free Datasheet http://www.datasheet4u.com/ D3 G4 D4 CHA6558-99F Electrical Characteristics 28-32GHz HPA 2W Tamb = +25°C, Vd = +6V Vg adjusted for quiescent current =1.4A Symbol Parameter Min Typ Max Unit Freq Operating frequency range 28 32 GHz G Small signal gain 21 dB P1dB Output power @ 1dB compression 33.2 dBm Psat Saturated output power 33.4 dBm PAE Power added efficiency at saturation 23 % Rlin Input return loss -8 dB Rlout Output return loss -6 dB Id Supply quiescent drain current 1.4 A Id_sat Drain current @ saturation 1.8 A Vg Negative gate voltage (G1,G2,G3,G4 pads) ≈-0.5 V These values are representative of on test fixture measurements a bonding wire of typically 0.3nH at the RF ports. Absolute Maximum Ratings (1) Tamb.= +25°C Symbol Parameter Values Unit Cmp Gain compression level 5 dB Vd Drain bias voltage ( D1,D2 ,D3 ,D4) 7 V Id Supply quiescent current 1.6 A Vg Gate bias voltage -2 to -0.2 V (2) Pin Maximum peak input power overdrive +18 dBm (3) Tj Junction temperature 175 °C Ta Operating temperature range -40 to +85 °C Tstg Storage temperature range -55 to +150 °C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. (3) Thermal Resistance channel to ground paddle = 6.2°C/W for T= +85°C. Typical Bias Conditions Tamb.= +25°C Symbol Pad No Parameter Vd D1,D2,D3,D4 DC drain Voltage Id DC Drain current controlled with vg Vg G1,G2,G3,G4 DC gate Voltage (1) To be adjusted until to obtain Id:1.4A Values 6 1.4 ≈-0.5(1) Unit V A V Ref. : DSCHA6558-QAG2251 - 07 Sep 12 2/10 Specifications subject to change without notice Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Free Datasheet http://www.datasheet4u.com/ 28-32GHz HPA 2W Tamb.= +25°C, Vd = +6V, Id = 1.4A CHA6558-99F Typical S parameters in test fixture Measurements Linear Gain && RLosses versus Frequency Linear gain Rlosses versus Frequency 30 25 Linear Gain & Return losses (dB) 20 15 10 5 0 -5 -10 -15 -20 26 27 28 29 30 31 32 33 34 dBS21 dBS11 dBS22 35 36 Frequency (GHz) Output Power @1dB compression & saturation versus frequency Output Power @ saturation versus Frequency 39 Output Power @ saturation (dBm) 37 35 33 31 Pout @ saturation 29 27 25 28 29 30 31 32 33 Frequency (GHz) Ref. DSCHA6558-QAG2251 - 07 Sep 12 3/10 Specifications subject to change without notice Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Free Datasheet http://www.datasheet4u.com/ CHA6558-99F 28-32GHz HPA 2W Typical S parameters in test fixture Measurements Tamb.= +25°C, Vd = +6V, Id = 1.4A Drain current @ saturation versus Frequency 2 Drain Current @ saturation (A) 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1 28 29 Drain current @ Saturation 30 31 32 33 Frequency (GHz) PAE @ saturation versus Frequency Power added efficiency @ 1dB compression & saturation versus frequency 35 33 31 29 27 25 23 21 19 17 15 13 11 9 7 5 28 29 PAE (%) @ saturation PAE @ saturation 30 31 Frequency (GHz) 32 33 Ref. : DSCHA6558-QAG2251 - 07 Sep 12 4/10 Specifications subject to change without notice Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Free Datasheet http://www.datasheet4u.com/ 28-32GHz HPA 2W CHA6558-99F Typical Measurement in test fixture versus Temperature Linear gain versus Frequency & Temperature 40 35 30 25 Linear Gain.


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