CHA6664-QDG

CHA6664-QDG RoHS COMPLIANT 12-16GHz 1W High Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA6664-QDG is a three-stages Ku-band high power amplifier. The circuit is manufactured with a standard Power P-HEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in RoHS compliant SMD package. Main Features 35 dB(S21), dB(S11), dB(S22) versus frequency (GHz) S21, S11, S22 (dB) ■ 0.25 µm Power pHEMT Technology ■ 12-16 GHz Frequency Range ■ 31.5 dBm Saturated Output Power ■ High gain: 28dB ■ Quiescent Bias Point: 8V, 600mA ■ 24L-QFN4x4 SMD package 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Frequency (GHz) dB(S21) dB(S11) dB(S22) Typical on board measurements Main Characteristics Tamb = +25° C, Vd1=Vd2=Vd3=+8V, Id (Quiescent)=600mA , CW biasing mode Symbol F_op P_Sat G_lin Parameter Operating Frequency Range Saturated output power Linear Gain Min 12 31.5 28 Typ Max 16 Unit GHz dBm dB ESD Protections: Electrostatic discharge sensitive device observe handling precautions! Ref. : DSCHA6664QDG6332 - 28 Nov 06 1/10 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - BP46 - 91401 Orsay Cedex France Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Free Datasheet http://www.datasheet4u.com/ CHA6664-QDG Electrical Characteristics 12-16GHz...