TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1887
High-Current Switching Applications
2SA1887
Unit: m...
TOSHIBA
Transistor Silicon
PNP Epitaxial Type (PCT Process)
2SA1887
High-Current Switching Applications
2SA1887
Unit: mm
Low collector saturation voltage: VCE (sat) = −0.4 V (max) at IC = −5 A
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC IB
PC
Tj Tstg
−80 −50 −7 −10 -1 2.0 25 150 −55 to 150
V V V A A
W
°C °C
JEDEC JEITA
― SC-67
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-10R1A
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
Weight: 1.7 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2009-09-30
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency...