DatasheetsPDF.com

DMN2041L Dataheets PDF



Part Number DMN2041L
Manufacturers Diodes
Logo Diodes
Description N-Channel MOSFET
Datasheet DMN2041L DatasheetDMN2041L Datasheet (PDF)

NOT RECOMMENDED FOR NEW DESIGN USE DMN2040U DMN2041L N-CHANNEL ENHANCEMENT MODE MOSFET Features  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Mechanical Data  Case: SOT23  Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classif.

  DMN2041L   DMN2041L



Document
NOT RECOMMENDED FOR NEW DESIGN USE DMN2040U DMN2041L N-CHANNEL ENHANCEMENT MODE MOSFET Features  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Mechanical Data  Case: SOT23  Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish  Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208  Terminals Connections: See Diagram Below  Weight: 0.008 grams (Approximate) Drain Top View Gate Source Internal Schematic D GS Top View Ordering Information (Note 4) Notes: Part Number Case Packaging DMN2041L-7 SOT23 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information MN9 YM MN9 = Product Type Marking Code YM or YM = Date Code Marking for SAT Y or Y = Year (ex: A = 2013) M = Month (ex: 9 = September) Date Code Key Year Code Month Code 2009 W Jan Feb 12 2010 X Mar 3 2011 Y Apr May 45 2012 Z Jun Jul 67 2013 A Aug 8 Sep 9 2014 B Oct O 2015 C Nov Dec ND DMN2041L Document number: DS31962 Rev. 4 - 3 1 of 6 www.diodes.com January 2019 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMN2040U Maximum Ratings (@TA = +25°C, unless otherwise specified.) Drain-Source Voltage Characteristic Gate-Source Voltage Continuous Drain Current (Note 5) Steady State Pulsed Drain Current (Note 6) TA = +25°C TA = +70°C Symbol VDSS VGSS ID IDM Value 20 ±12 6.4 4.5 30 DMN2041L Unit V V A A Thermal Characteristics Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @ TA = +25°C Operating and Storage Temperature Range Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout. 6. Repetitive rating, pulse width limited by junction temperature. Symbol PD RθJA TJ, TSTG Value 0.78 161 -55 to +150 Unit W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol BVDSS IDSS IGSS VGS(TH) Static Drain-Source On-Resistance RDS(ON) Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) |Yfs| VSD Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (10V) Total Gate Charge (4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF Notes: 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. Min 20 — — 0.5 — — — — — — — — — — — — — — — — Typ — — — — 20 26 6 0.7 550 88 81 1.34 15.6 7.2 1.0 1.9 4.69 13.19 22.10 6.43 Max — 1.0 ±100 1.2 28 41 — 1.2 — — — — — — — — — — — — Unit Test Condition V VGS = 0V, ID = 250μA µA VDS = 20V, VGS = 0V nA VGS = ±12V, VDS = 0V V VDS = VGS, ID = 250μA mΩ VGS = 4.5V, ID = 6.0A VGS = 2.5V, ID = 5.2A S VDS = 10V, ID = 6A V VGS = 0V, IS = 1.7A pF VDS = 10V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VGS = 10V, VDS = 10V, ID = 6A nC VGS = 4.5V, VDS = 10V, ID = 6A ns VDD = 10V, VGEN = 4.5V, RGEN = 1Ω, ID = 6.7A DMN2041L Document number: DS31962 Rev. 4 - 3 2 of 6 www.diodes.com January 2019 © Diodes Incorporated ID, DRAIN CURRENT (A) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () NOT RECOMMENDED FOR NEW DESIGN USE DMN2040U DMN2041L 20 VGS = 10V 16 VGS = 4.5V VGS = 3.0V VGS = 2.5V 12 VGS = 2.0V 8 4 VGS = 1.5V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 0.06 0.05 0.04 0.03 0.02 0.01 0 0 1.6 VGS = 1.8V VGS = 2.5V VGS = 10V VGS = 4.5V 4 8 12 16 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 20 20 VDS = 5V 16 ID, DRAIN CURRENT (A) NT()A RE 12 R U C N RAI 8 D , I D 4 0 0 TA = 150°C TA = 125°C TA = 85°C TA = 25°C TA = -55°C 0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAG.


DMN2040LTS DMN2041L DMN2041LSD


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)