Document
NOT RECOMMENDED FOR NEW DESIGN USE DMN2040U
DMN2041L
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 Terminals Connections: See Diagram Below Weight: 0.008 grams (Approximate)
Drain
Top View
Gate
Source
Internal Schematic
D
GS Top View
Ordering Information (Note 4)
Notes:
Part Number
Case
Packaging
DMN2041L-7
SOT23
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
MN9
YM
MN9 = Product Type Marking Code YM or YM = Date Code Marking for SAT Y or Y = Year (ex: A = 2013) M = Month (ex: 9 = September)
Date Code Key Year Code
Month Code
2009 W
Jan Feb 12
2010 X
Mar 3
2011 Y
Apr May 45
2012 Z
Jun Jul 67
2013 A
Aug 8
Sep 9
2014 B
Oct O
2015 C
Nov Dec ND
DMN2041L
Document number: DS31962 Rev. 4 - 3
1 of 6 www.diodes.com
January 2019
© Diodes Incorporated
NOT RECOMMENDED FOR NEW DESIGN USE DMN2040U
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Characteristic
Gate-Source Voltage
Continuous Drain Current (Note 5)
Steady State
Pulsed Drain Current (Note 6)
TA = +25°C TA = +70°C
Symbol VDSS VGSS
ID
IDM
Value 20 ±12 6.4 4.5 30
DMN2041L
Unit V V A A
Thermal Characteristics
Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @ TA = +25°C Operating and Storage Temperature Range
Notes:
5. Device mounted on FR-4 PCB with minimum recommended pad layout. 6. Repetitive rating, pulse width limited by junction temperature.
Symbol PD RθJA
TJ, TSTG
Value 0.78 161 -55 to +150
Unit W °C/W °C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage
Symbol
BVDSS IDSS IGSS
VGS(TH)
Static Drain-Source On-Resistance
RDS(ON)
Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8)
|Yfs| VSD
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (10V) Total Gate Charge (4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON)
tR tD(OFF)
tF
Notes:
7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing.
Min
20 — —
0.5 — —
— —
— — — — — — — — — — — —
Typ
— — —
— 20 26 6 0.7
550 88 81 1.34 15.6 7.2 1.0 1.9 4.69 13.19 22.10 6.43
Max
— 1.0 ±100
1.2 28 41 — 1.2
— — — — — — — — — — — —
Unit
Test Condition
V VGS = 0V, ID = 250μA µA VDS = 20V, VGS = 0V nA VGS = ±12V, VDS = 0V
V VDS = VGS, ID = 250μA mΩ VGS = 4.5V, ID = 6.0A
VGS = 2.5V, ID = 5.2A S VDS = 10V, ID = 6A V VGS = 0V, IS = 1.7A
pF VDS = 10V, VGS = 0V, f = 1.0MHz
Ω VDS = 0V, VGS = 0V, f = 1MHz nC VGS = 10V, VDS = 10V, ID = 6A
nC VGS = 4.5V, VDS = 10V, ID = 6A
ns
VDD = 10V, VGEN = 4.5V, RGEN = 1Ω, ID = 6.7A
DMN2041L
Document number: DS31962 Rev. 4 - 3
2 of 6 www.diodes.com
January 2019
© Diodes Incorporated
ID, DRAIN CURRENT (A)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
NOT RECOMMENDED FOR NEW DESIGN USE DMN2040U
DMN2041L
20 VGS = 10V
16 VGS = 4.5V
VGS = 3.0V VGS = 2.5V
12
VGS = 2.0V
8
4 VGS = 1.5V
0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic
0.06
0.05
0.04 0.03 0.02 0.01
0 0
1.6
VGS = 1.8V
VGS = 2.5V VGS = 10V VGS = 4.5V
4 8 12 16 ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
20
20
VDS = 5V
16
ID, DRAIN CURRENT (A)
NT()A RE
12
R
U
C
N RAI
8
D
, I
D
4
0 0
TA = 150°C TA = 125°C
TA = 85°C TA = 25°C TA = -55°C
0.5 1 1.5 2 2.5
VGS, GATE-SOURCE VOLTAG.