Dual N-Channel MOSFET
DMN2041LSD
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
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Features...
Description
DMN2041LSD
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
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Features
Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.072 grams (approximate)
NEW PRODUCT
SO-8
D1
S1 G1 S2 G2
TOP VIEW Internal Schematic
D2
D1 D1 D2 D2
G1
G2
TOP VIEW
S1
N-Channel MOSFET
S2
N-Channel MOSFET
Maximum Ratings
Drain-Source Voltage Gate-Source Voltage Drain Current (Note 3) Pulsed Drain Current (Note 4)
@TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Steady State TA = 25°C TA = 85°C ID IDM Value 20 ±12 7.63 4.92 30 Units V V A A
Thermal Characteristics
Characteristic Total Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient @TA = 25°C Operating and Storage Temperature Range
Notes: 1. 2. 3. 4.
Symbol PD RθJA TJ, TSTG
Value 1.16 107.4 -55 to +150
Unit W °C/W °C
No purposefully added lead. Diodes Inc.'s "Gree...
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