2SA1891

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1891 Power Amplifier Applications Power Switching Applications 2SA1891 Unit: mm Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) High collector power dissipation: PC = 1.3 W (Ta = 25 °C) High-speed switching time: tstg = 300 ns (typ.) Complementary to 2SC5028 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC ICP IB PC Tj Tstg −60 −50 −6 −2 −4 −0.2 1.3 150 −55 to 150 V V V A A W °C °C JEDEC ― JEITA ― TOSHIBA 2-8M1A Weight: 0.55 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-09 Electrical Characteristics (Ta = 25°C) 2SA1891 Characteristics Collector cut-off current Emit...