DMN3200U

Product specification DMN3200U N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Low On-Resistance 90 mΩ @ VGS = 4.5V 110 mΩ @ VGS = 2.5V 200 mΩ @ VGS = 1.5V Very Low Gate Threshold Voltage Low Input Capacitance ESD Protected Gate Fast Switching Speed Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 2, 3 and 5) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Case: SOT-23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminal Connections: See Diagram Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (approximate) NEW PRODUCT SOT-23 Drain D Gate ESD PROTECTED TO 3kV TOP VIEW Gate Protection Diode G Source S TOP VIEW Equivalent Circuit Maximum Ratings @TA = 25°C unless otherwise specified Symbol VDSS VGSS ID IDM Value 30 ±8 2.2 9 Units V V A A Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Pulsed Drain Current (Note 1) Thermal Characteristics @TA = 25°C unless otherwise specified Symbol PD RθJA TJ, TSTG Value 650 192 -55 to +150 Units mW °C/W °C Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero...