Document
NOT RECOMMENDED FOR NEW DESIGN USE DMP22D5UDJ
DMP210DUDJ
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS -20V
RDS(ON)
5.5Ω @ VGS = -4.5V 7.5Ω @ VGS = -2.5V
ID TA = +25°C
-200mA -170mA
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power-management applications.
Applications
DC-DC converters Power-management functions
Features
Dual P-Channel MOSFET Low On-Resistance
5.5Ω @ -4.5V 7.5Ω @ -2.5V 11.5Ω @ -1.8V 17.5Ω @ -1.5V Very Low Gate Threshold Voltage VGS(TH) < 1.15V Low Input Capacitance Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotiveproducts/. This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/
Mechanical Data
Package: SOT963 Package Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish—Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 Weight: 0.0027 grams (Approximate)
SOT963
D2
G1
S1
ESD Protected
Top View
S2
G2
D1
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number DMP210DUDJ-7
Package SOT963
Qty. 10,000
Packing Carrier
Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
DMP210DUDJ
Document number: DS31494 Rev. 11 - 3
1 of 6 www.diodes.com
January 2023
© 2023 Copyright Diodes Incorporated. All Rights Reserved.
Marking Information (Note 5)
DMP210DUDJ
P1
P1 = Product Type Marking Code
Note:
5. Package is non-polarized. Parts may be on reel in orientation illustrated, 180°rotated, or mixed (both ways).
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = -4.5V
Continuous Drain Current (Note 6) VGS = -2.5V Pulsed Drain Current
TA = +25°C TA = +70°C TA = +25°C TA = +70°C TP = 10μs
Symbol VDSS VGSS ID
ID IDM
Value -20 ±8 -200 -150
-170 -130 -600
Units V V mA
mA mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range
Symbol PD RϴJA
TJ, TSTG
Value 330
377.16 -55 to +150
Units mW °C/W °C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance Diode Forward Voltage (Note 7) DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 8) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
Symbol Min
BVDSS
-20
IDSS
IGSS
VGS(TH)
RDS(ON)
|Yfs| VSD
Ciss Coss Crss
td(on) tr
td(off) tf
-0.45 -0.5
Typ
20 200
13.72 4.01 2.34
7.7 19.3 25.9 31.5
Max
-100 -50 100 1
-1.15 5.5 7.5 11.5 17.5 -1.2
27.44 8.02 4.68
Unit V nA nA nA µA
V
Ω
mS V pF pF pF
ns
Notes:
6. Device mounted on 1”×1” FR-4 substrate PCB, with minimum recommended pad layout, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing.
Test Condition
VGS = 0V, ID = -250µA VDS = -16V, VGS = 0V VDS = -5.0V, VGS = 0V VGS = 5.0V, VDS = 0V VGS = 8.0V, VDS = 0V
VDS = VGS, ID = -250µA VGS = -4.5V, ID = -100mA VGS = -2.5V, ID = -50mA VGS = -1.8V, ID = -20mA VGS = -1.5V, ID = -10mA VGS = -1.2V, ID = -1mA VDS .