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DMP210DUDJ Dataheets PDF



Part Number DMP210DUDJ
Manufacturers Diodes
Logo Diodes
Description Dual P-Channel MOSFET
Datasheet DMP210DUDJ DatasheetDMP210DUDJ Datasheet (PDF)

NOT RECOMMENDED FOR NEW DESIGN USE DMP22D5UDJ DMP210DUDJ DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -20V RDS(ON) 5.5Ω @ VGS = -4.5V 7.5Ω @ VGS = -2.5V ID TA = +25°C -200mA -170mA Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power-management applications. Applications  DC-DC converters  Power-management functions Features  Dual P-C.

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NOT RECOMMENDED FOR NEW DESIGN USE DMP22D5UDJ DMP210DUDJ DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -20V RDS(ON) 5.5Ω @ VGS = -4.5V 7.5Ω @ VGS = -2.5V ID TA = +25°C -200mA -170mA Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power-management applications. Applications  DC-DC converters  Power-management functions Features  Dual P-Channel MOSFET  Low On-Resistance  5.5Ω @ -4.5V  7.5Ω @ -2.5V  11.5Ω @ -1.8V  17.5Ω @ -1.5V  Very Low Gate Threshold Voltage VGS(TH) < 1.15V  Low Input Capacitance  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotiveproducts/.  This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/ Mechanical Data  Package: SOT963  Package Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Connections: See Diagram  Terminals: Finish—Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208  Weight: 0.0027 grams (Approximate) SOT963 D2 G1 S1 ESD Protected Top View S2 G2 D1 Internal Schematic Ordering Information (Note 4) Notes: Part Number DMP210DUDJ-7 Package SOT963 Qty. 10,000 Packing Carrier Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. DMP210DUDJ Document number: DS31494 Rev. 11 - 3 1 of 6 www.diodes.com January 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. Marking Information (Note 5) DMP210DUDJ P1 P1 = Product Type Marking Code Note: 5. Package is non-polarized. Parts may be on reel in orientation illustrated, 180°rotated, or mixed (both ways). Maximum Ratings (@TA = +25°C, unless otherwise specified.) Drain-Source Voltage Gate-Source Voltage Characteristic Continuous Drain Current (Note 6) VGS = -4.5V Continuous Drain Current (Note 6) VGS = -2.5V Pulsed Drain Current TA = +25°C TA = +70°C TA = +25°C TA = +70°C TP = 10μs Symbol VDSS VGSS ID ID IDM Value -20 ±8 -200 -150 -170 -130 -600 Units V V mA mA mA Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range Symbol PD RϴJA TJ, TSTG Value 330 377.16 -55 to +150 Units mW °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 7) DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 8) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Symbol Min BVDSS -20 IDSS   IGSS  VGS(TH) RDS(ON) |Yfs| VSD Ciss Coss Crss td(on) tr td(off) tf -0.45       -0.5        Typ          20 200  13.72 4.01 2.34 7.7 19.3 25.9 31.5 Max  -100 -50 100 1 -1.15 5.5 7.5 11.5 17.5   -1.2 27.44 8.02 4.68     Unit V nA nA nA µA V Ω mS V pF pF pF ns Notes: 6. Device mounted on 1”×1” FR-4 substrate PCB, with minimum recommended pad layout, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. Test Condition VGS = 0V, ID = -250µA VDS = -16V, VGS = 0V VDS = -5.0V, VGS = 0V VGS = 5.0V, VDS = 0V VGS = 8.0V, VDS = 0V VDS = VGS, ID = -250µA VGS = -4.5V, ID = -100mA VGS = -2.5V, ID = -50mA VGS = -1.8V, ID = -20mA VGS = -1.5V, ID = -10mA VGS = -1.2V, ID = -1mA VDS .


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