Dual P-Channel MOSFET
DMP2160UFDB
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
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Feature...
Description
DMP2160UFDB
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
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Features
Low On-Resistance 70mΩ @VGS = -4.5V 85mΩ @VGS = -2.5V 86mΩ (typ) @VGS = -1.8V Low Gate Threshold Voltage, -0.9V Max Fast Switching Speed Low Input/Output Leakage Low Profile, 0.5mm Max Height Lead Free/RoHS Compliant (Note 2) "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: DFN2020B-6 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – NiPdAu annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.0065 grams (approximate)
DFN2020B-6
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BOTTOM VIEW
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TOP VIEW Internal Schematic
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Symbol PD RθJA TJ, TSTG Value 1.4 89 -55 to +150 Unit W °C/W °C
Maximum Ratings
@TA = 25°C unless otherwise specified Symbol VDSS VGSS ID IDM Value -20 ±12 -3.8 -13 Units V V A A
Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Pulsed Drain Current (Note 4)
Notes: 1. 2. 3. 4.
Device mounted on FR-4 PCB, on minimum recommended,...
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