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DMP2160UW Dataheets PDF



Part Number DMP2160UW
Manufacturers Diodes
Logo Diodes
Description P-Channel MOSFET
Datasheet DMP2160UW DatasheetDMP2160UW Datasheet (PDF)

DMP2160UW P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features • Low On-Resistance • 100 mΩ @ VGS = -4.5V • 120 mΩ @ VGS = -2.5V • 160 mΩ @ VGS = -1.8V Very Low Gate Threshold Voltage VGS(th) ≤ 1V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q 101 Standards for High Reliability Mechanical Data • • • • • • • • Case: SOT-323 Case Material:.

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DMP2160UW P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features • Low On-Resistance • 100 mΩ @ VGS = -4.5V • 120 mΩ @ VGS = -2.5V • 160 mΩ @ VGS = -1.8V Very Low Gate Threshold Voltage VGS(th) ≤ 1V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q 101 Standards for High Reliability Mechanical Data • • • • • • • • Case: SOT-323 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals Connections: See Diagram Below Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.006 grams (approximate) NEW PRODUCT • • • • • • • SOT-323 Drain D Gate G Source S TOP VIEW Internal Schematic TOP VIEW Maximum Ratings Drain-Source Voltage Gate-Source Voltage Drain Current (Note 3) Pulsed Drain Current @TA = 25°C unless otherwise specified Symbol VDSS VGSS TA = 25°C TA = 70°C ID IDM Value -20 ±12 -1.5 -1.2 -10 Units V V A A Characteristic Thermal Characteristics Characteristic Total Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: 1. 2. 3. Symbol PD RθJA TJ, TSTG Value 350 360 -55 to +150 Units mW °C/W °C No purposefully added lead. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Device mounted on 1in2 FR-4 PCB with 2 oz. Copper. t ≤ 10 sec. DMP2160UW Document number: DS31521 Rev. 3 - 2 1 of 4 www.diodes.com November 2008 Free Datasheet http://www.datasheet4u.com/ © Diodes Incorporated DMP2160UW Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage @TA = 25°C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) gFS VSD Ciss Coss Crss Min -20 ⎯ ⎯ ⎯ -0.4 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ ⎯ ⎯ ⎯ ⎯ -0.6 75 90 120 4 ⎯ 627 64 53 Max ⎯ -1.0 ±100 ±800 -0.9 100 120 160 ⎯ -1.0 ⎯ ⎯ ⎯ Unit V μA nA V mΩ S V pF pF pF Test Condition VGS = 0V, ID = -250μA VDS = -20V, VGS = 0V VGS = ±8V, VDS = 0V VGS = ±12V, VDS = 0V VDS = VGS, ID = -250μA VGS = -4.5V, ID = -1.5A VGS = -2.5V, ID = -1.2A VGS = -1.8V, ID = -1A VDS = -10V, ID = -1.5A VGS = 0V, IS = -1.0A VDS = -10V, VGS = 0V f = 1.0MHz TJ = 25°C NEW PRODUCT ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage (Note 4) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: 4. Short duration pulse test used to minimize self-heating effect. 10 VGS = 3.0V 10 VDS = -5V ID, DRAIN CURRENT (A) VGS = 3.0V VGS = 2.5V 6 VGS = 2.0V -ID, DRAIN CURRENT (A) 8 VGS = 3.0V 8 6 4 VGS = 1.5V 4 2 2 TA.


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