Document
DMP2160UW
P-CHANNEL ENHANCEMENT MODE MOSFET
Please click here to visit our online spice models database.
Features
• Low On-Resistance • 100 mΩ @ VGS = -4.5V • 120 mΩ @ VGS = -2.5V • 160 mΩ @ VGS = -1.8V Very Low Gate Threshold Voltage VGS(th) ≤ 1V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q 101 Standards for High Reliability
Mechanical Data
• • • • • • • • Case: SOT-323 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals Connections: See Diagram Below Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.006 grams (approximate)
NEW PRODUCT
• • • • • • •
SOT-323
Drain
D
Gate
G
Source
S
TOP VIEW
Internal Schematic
TOP VIEW
Maximum Ratings
Drain-Source Voltage Gate-Source Voltage Drain Current (Note 3) Pulsed Drain Current
@TA = 25°C unless otherwise specified Symbol VDSS VGSS TA = 25°C TA = 70°C ID IDM Value -20 ±12 -1.5 -1.2 -10 Units V V A A
Characteristic
Thermal Characteristics
Characteristic Total Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range
Notes: 1. 2. 3.
Symbol PD RθJA TJ, TSTG
Value 350 360 -55 to +150
Units mW °C/W °C
No purposefully added lead. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Device mounted on 1in2 FR-4 PCB with 2 oz. Copper. t ≤ 10 sec.
DMP2160UW
Document number: DS31521 Rev. 3 - 2
1 of 4 www.diodes.com
November 2008
Free Datasheet http://www.datasheet4u.com/
© Diodes Incorporated
DMP2160UW Electrical Characteristics
Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage
@TA = 25°C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) gFS VSD Ciss Coss Crss Min -20 ⎯ ⎯ ⎯ -0.4 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ ⎯ ⎯ ⎯ ⎯ -0.6 75 90 120 4 ⎯ 627 64 53 Max ⎯ -1.0 ±100 ±800 -0.9 100 120 160 ⎯ -1.0 ⎯ ⎯ ⎯ Unit V μA nA V mΩ S V pF pF pF Test Condition VGS = 0V, ID = -250μA VDS = -20V, VGS = 0V VGS = ±8V, VDS = 0V VGS = ±12V, VDS = 0V VDS = VGS, ID = -250μA VGS = -4.5V, ID = -1.5A VGS = -2.5V, ID = -1.2A VGS = -1.8V, ID = -1A VDS = -10V, ID = -1.5A VGS = 0V, IS = -1.0A VDS = -10V, VGS = 0V f = 1.0MHz
TJ = 25°C
NEW PRODUCT
ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage (Note 4) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance
Notes: 4.
Short duration pulse test used to minimize self-heating effect.
10
VGS = 3.0V
10
VDS = -5V
ID, DRAIN CURRENT (A)
VGS = 3.0V VGS = 2.5V
6
VGS = 2.0V
-ID, DRAIN CURRENT (A)
8
VGS = 3.0V
8
6
4
VGS = 1.5V
4
2
2
TA.