2SA1898

Ordering number:5049 Applications · High-speed switching. Features · Adoption of FBET and MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed. PNP Epitaxial Planar Silicon Transistor 2SA1898 DC/DC Converter Application Package Dimensions unit:mm 2038A [2SA1898] 1 : Base 2 : Collector 3 :Emitter Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Mounted on ceramic board (250mm2×0.8mm) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol Conditions ICBO IEBO hFE1 hFE2 fT Cob VCE(sat) VBE(sat) VCB=–12V, IE=0 VEB=–3V, IC=0 VCE=–2V, IC=–0.5A VCE=–2V, IC=–3A VCE=–2V, IC=–0.3A VCB=–10V, f=1MHz IC=–1.5A, IB=–75mA IC=–1.5A, IB=–75mA SANYO : PCP (Bottom view) Ratings –15 –15 –5 –3 –5 –600 1.3 150 –55 to +150 Unit V V V A A mA W ˚C ˚C Ratings min typ 100* 50 300 28 –0.25 –0.95 max –1 –1 280* –0.5 –1.2 Unit µA µA MHz pF V V Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high lev...