2SA1905

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1905 High-Current Switching Applications. 2SA1905 Unit: mm Low collector saturation voltage: VCE (sat) = −0.4 V (max) High speed switching time: tstg = 1.0 μs (typ.) Complementary to 2SC5076 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −60 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −5 V Collector current IC −5 A Base current IB −1 A Collector power dissipation PC 1.3 W Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEDEC ― Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEITA TOSHIBA ― 2-8M1A temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. Weight: 0.55 g (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Downloaded from Elcodis.com electronic components distributor 1 2006-11-09 Electrical Characteristics (Ta = 25°C) 2SA1905 Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown...