IRF9310PBF

VDS RDS(on) max (@VGS = 10V) ID (@TA = 25°C) -30 V 6 4.6 mΩ 6 6 -20 A * Applications Charge and Discharge Switch for Notebook PC Battery Application PD - 97437A IRF9310PbF HEXFET® Power MOSFET ' ' ' ' SO-8 Features and Benefits Features Low RDSon (≤ 4.6mΩ) Industry-Standard SO8 Package RoHS Compliant Containing no Lead, no Bromide and no Halogen Resulting Benefits Lower Conduction Losses results in ⇒ Multi-Vendor Compatibility Environmentally Friendlier Orderable part number IRF9310PbF IRF9310TRPbF Package Type SO8 SO8 Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel 4000 Note Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V c Pulsed Drain Current f Power Dissipation f Power Dissipation Linear Derating Factor TJ TSTG Operating Junction and Storage Temperature Range Notes  through … are on page 2 www.irf.com Max. -30 ± 20 -20 -16 -160 2.5 1.6 0.02 -55 to + 150 Units V A W W/°C °C 1 03/19/2010 IRF9310PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. BVDSS Drain-to-Source Breakdown Voltage -30 ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– RDS(on) Static Drain-to-Source On-Resistance ––– ––– VGS(th) Gate Threshold Voltage -1.3 ∆VGS(th) Gate Threshold Voltage Coefficient ––– IDSS Drain-to-Source Leakage Current ...