IRF9317PBF

VDS RDS(on) max (@VGS = -10V) RDS(on) max (@VGS = -4.5V) Qg (typical) ID (@TA = 25°C) -30 V 6.6 m: S1 S2 10.2 m: S3 G4 31 nC -16 A PD - 97465 IRF9317PbF HEXFET® Power MOSFET 8D 7D 6D 5D SO-8 Applications Charge and Discharge Switch for Notebook PC Battery Application Features and Benefits Features Industry-Standard SO8 Package RoHS Compliant Containing no Lead, no Bromide and no Halogen Resulting Benefits Multi-Vendor Compatibility Environmentally Friendlier Orderable part number IRF9317PbF IRF9317TRPbF Package Type SO8 SO8 Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel 4000 Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V c Pulsed Drain Current f Power Dissipation f Power Dissipation Linear Derating Factor TJ TSTG Operating Junction and Storage Temperature Range Max. -30 ± 20 -16 -13 -130 2.5 1.6 0.02 -55 to + 150 Note Units V A W W/°C °C Notes  through † are on page 2 www.irf.com 1 3/5/10 IRF9317PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. BVDSS Drain-to-Source Breakdown Voltage -30 ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– RDS(on) Static Drain-to-Source On-Resistance ––– ––– VGS(th) Gate Threshold Voltage -1.3 ΔVGS(th) Gate Threshold Voltage Coefficient ––– IDSS Drain-to-Source Leakage Current ––– ...