IRF9328PBF

PD - 97518 IRF9328PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = -10V) -30 11.9 19.7 18 -12 V mΩ mΩ nC A 6 6 6 *         ' ' ' ' RDS(on) max (@VGS = -4.5V) Qg (typical) ID (@TA = 25°C) SO-8 Applications Charge and Discharge Switch for Notebook PC Battery Application Features and Benefits Features Resulting Benefits Industry-Standard SO8 Package Multi-Vendor Compatibility Environmentally Friendlier RoHS Compliant Containing no Lead, no Bromide and no Halogen Orderable part number IRF9328PbF IRF9328TRPbF Package Type SO8 SO8 Standard Pack Form Quantity Tube/Bulk 95 4000 Tape and Reel Note Absolute Maxim um Ratings Parameter V DS V GS I D @ TA = 25°C I D @ TA = 70°C I DM P D @TA = 25°C P D @TA = 70°C TJ T STG Drain-to-S ource Voltage Gate-to-Source Voltage Conti nuous Drain Current, VGS @ 10V Conti nuous Drain Current, VGS @ 10V Pul sed Drain Current Power Dissipation Power Dissipation Max. -30 ± 20 -12 -9.6 -96 2.5 1.6 0.02 -55 to + 150 Units V Linear Derating Factor Operating Juncti on and Storage Temperature Range f f c A W W/°C °C Notes  through † are on page 2 www.irf.com 1 5/26/10 Free Datasheet http://www.datasheet4u.com/ IRF9328PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ΔΒVDSS/ΔTJ RDS(on) VGS(th) ΔVGS(th) IDSS IGSS gfs Qg Qg Qgs Qgd RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Th...