IRF9332PBF

PD - 97561 IRF9332PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = -10V) -30 17.5 28.1 14 -9.8 V mΩ mΩ nC A 6 6 6 *         ' ' ' ' RDS(on) max (@VGS = -4.5V) Qg (typical) ID (@TA = 25°C) SO-8 Applications Charge and Discharge Switch for Notebook PC Battery Application System/Load Switch Features and Benefits Features Industry-Standard SO-8 Package RoHS Compliant Containing no Lead, no Bromide and no Halogen Resulting Benefits results in Multi-Vendor Compatibility Environmentally Friendlier ⇒ Orderable part number IRF9332PbF IRF9332TRPbF Package Type SO8 SO8 Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel 4000 Note Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Max. -30 ±20 -9.8 -7.8 -80 2.5 1.6 0.02 -55 to + 150 Units V Linear Derating Factor Operating Junction and Storage Temperature Range f Power Dissipation f Power Dissipation c A W W/°C °C Notes  through † are on page 2 www.irf.com 1 09/01/2010 Free Datasheet http://www.datasheet4u.com/ IRF9332PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th) IDSS IGSS gfs Qg Qg Qgs Qgd RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate T...