2SA1908
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC5100)
Application : Audio and General Purpose
...
2SA1908
Silicon
PNP Epitaxial Planar
Transistor (Complement to type 2SC5100)
Application : Audio and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
Ratings
Unit
VCBO
–120
V
VCEO
–120
V
VEBO
–6
V
IC
–8
A
IB
–3
A
PC
75(Tc=25°C)
W
Tj
150
°C
Tstg
–55 to +150
°C
sElectrical Characteristics
(Ta=25°C)
Symbol
Conditions
Ratings Unit
ICBO
VCB=–120V
–10max
µA
IEBO
VEB=–6V
–10max
µA
V(BR)CEO
IC=–50mA
–120min
V
hFE
VCE=–4V, IC=–3A
50min∗
VCE(sat)
IC=–3A, IB=–0.3A
–0.5max
V
fT
VCE=–12V, IE=0.5A
20typ
MHz
COB
VCB=–10V, f=1MHz
300typ
pF
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V)
(Ω)
(A)
(V)
(V)
(A)
–40
10
–4
–10
5
–0.4
IB2
ton
tstg
tf
(A)
(µs)
(µs)
(µs)
0.4 0.14typ 1.40typ 0.21typ
External Dimensions FM100(TO3PF)
15.6±0.2
5.5±0.2 3.45 ±0.2
0.8±0.2 5.5
23.0±0.3 9.5±0.2
16.2
ø3.3±0.2 a b
3.0
1.6 3.3
5.45±0.1
1.75
2.15
1.05
+0.2 -0.1
5.45±0.1
0.65
+0.2 -0.1
0.8 3.35
1.5 4.4 1.5
Weight : Approx 6.5g
a. Part No.
B C E b. Lot No.
Collector Current IC(A) –350mA
I C– V CE Characteristics (Typical)
–8
–200mA –150mA
–100mA
–6
–75mA
–50mA –4
–25mA
–2 IB=–10mA
0
0
–1
–2
–3
–4
Collector-Emitter Voltage VCE(V)
Collector-Emitter Saturation Voltage VCE(sat)(V)
V CE( s a t ) – I B Characteristics (Typical)
–3
I C– V BE Temperature Characteristics (Typical)
(VCE=–4V) –8
Collector Cur...
