Document
PD - 96312
IRF9362PbF
HEXFET® Power MOSFET
VDS RDS(on) max
(@VGS = -10V)
-30 21.0 32.0 13 -8.0
V mΩ mΩ nC A
S2 1 G 2 2 S1 3 G 1 4
8 D2 7 D2 6 D1 5 D1
RDS(on) max
(@VGS = -4.5V)
Qg (typical) ID
(@TA = 25°C)
SO-8
Applications
• Charge and Discharge Switch for Notebook PC Battery Application
Features and Benefits
Features Industry-Standard SO-8 Package RoHS Compliant Containing no Lead, no Bromide and no Halogen Resulting Benefits results in Multi-Vendor Compatibility Environmentally Friendlier ⇒
Orderable part number IRF9362PbF IRF9362TRPbF
Package Type SO8 SO8
Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel 4000
Note
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation
Max.
-30 ±20 -8.0 -6.4 -64 2.0 1.3 0.016 -55 to + 150
Units
V
f Power Dissipation f
c
A
W W/°C °C
Linear Derating Factor Operating Junction and Storage Temperature Range
Notes through are on page 2
www.irf.com
1
06/25/10 Free Datasheet http://www.datasheet4u.com/
IRF9362PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th) IDSS IGSS gfs Qg Qg Qgs Qgd RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance
Min.
-30 ––– ––– ––– -1.3 ––– ––– ––– ––– ––– 12 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Typ.
––– 0.021 17.0 25.7 -1.8 -5.8 ––– ––– ––– ––– ––– 13 26 3.8 6.3 17 5.2 5.9 115 53 1300 250 170
Max.
––– ––– 21.0 32.0 -2.4 ––– -1.0 -150 -100 100 ––– ––– 39 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– –––
Units
V V/°C mΩ V mV/°C µA nA S nC nC Ω
Conditions
VGS = 0V, ID = -250µA Reference to 25°C, ID = -1mA VGS = -10V, ID = -8.0A VGS = -4.5V, ID = -6.4A VDS = VGS, ID = -25µA VDS = -24V, VGS = 0V VDS = -24V, VGS = 0V, TJ = 125°C VGS = -20V VGS = 20V VDS = -10V, ID = -6.4A VDS = -15V, VGS = -4.5V, ID = - 6.4A VGS = -10V VDS = -15V ID = -6.4A VDD = -30V, VGS = -10V
e e
h Total Gate Charge h
Total Gate Charge Gate Resistance Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance
Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time
h
h h
ns
ID = -1.0A RG = 6.0Ω See Figs. 19a & 19b VGS = 0V
e
pF
VDS = -25V ƒ = 1.0kHz Max. 94 -6.4 Units mJ A
Reverse Transfer Capacitance Parameter
Avalanche Characteristics
EAS IAR Single Pulse Avalanche Energy Avalanche Current
Diode Characteristics
Parameter
IS ISM VSD trr Qrr (Body Diode)
d
Min.
––– ––– ––– ––– –––
Typ.
––– ––– ––– 32 20
Max.
-2.0
Units
A
Conditions
MOSFET symbol showing the integral reverse p-n junction diode.
G S.