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IRF9362PBF Dataheets PDF



Part Number IRF9362PBF
Manufacturers International Rectifier
Logo International Rectifier
Description HEXFET Power MOSFET
Datasheet IRF9362PBF DatasheetIRF9362PBF Datasheet (PDF)

PD - 96312 IRF9362PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = -10V) -30 21.0 32.0 13 -8.0 V mΩ mΩ nC A S2 1 G 2 2 S1 3 G 1 4 8 D2 7 D2 6 D1 5 D1 RDS(on) max (@VGS = -4.5V) Qg (typical) ID (@TA = 25°C) SO-8 Applications • Charge and Discharge Switch for Notebook PC Battery Application Features and Benefits Features Industry-Standard SO-8 Package RoHS Compliant Containing no Lead, no Bromide and no Halogen Resulting Benefits results in Multi-Vendor Compatibility Environmentally Fri.

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PD - 96312 IRF9362PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = -10V) -30 21.0 32.0 13 -8.0 V mΩ mΩ nC A S2 1 G 2 2 S1 3 G 1 4 8 D2 7 D2 6 D1 5 D1 RDS(on) max (@VGS = -4.5V) Qg (typical) ID (@TA = 25°C) SO-8 Applications • Charge and Discharge Switch for Notebook PC Battery Application Features and Benefits Features Industry-Standard SO-8 Package RoHS Compliant Containing no Lead, no Bromide and no Halogen Resulting Benefits results in Multi-Vendor Compatibility Environmentally Friendlier ⇒ Orderable part number IRF9362PbF IRF9362TRPbF Package Type SO8 SO8 Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel 4000 Note Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Max. -30 ±20 -8.0 -6.4 -64 2.0 1.3 0.016 -55 to + 150 Units V f Power Dissipation f c A W W/°C °C Linear Derating Factor Operating Junction and Storage Temperature Range Notes  through † are on page 2 www.irf.com 1 06/25/10 Free Datasheet http://www.datasheet4u.com/ IRF9362PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th) IDSS IGSS gfs Qg Qg Qgs Qgd RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Min. -30 ––– ––– ––– -1.3 ––– ––– ––– ––– ––– 12 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.021 17.0 25.7 -1.8 -5.8 ––– ––– ––– ––– ––– 13 26 3.8 6.3 17 5.2 5.9 115 53 1300 250 170 Max. ––– ––– 21.0 32.0 -2.4 ––– -1.0 -150 -100 100 ––– ––– 39 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– ––– Units V V/°C mΩ V mV/°C µA nA S nC nC Ω Conditions VGS = 0V, ID = -250µA Reference to 25°C, ID = -1mA VGS = -10V, ID = -8.0A VGS = -4.5V, ID = -6.4A VDS = VGS, ID = -25µA VDS = -24V, VGS = 0V VDS = -24V, VGS = 0V, TJ = 125°C VGS = -20V VGS = 20V VDS = -10V, ID = -6.4A VDS = -15V, VGS = -4.5V, ID = - 6.4A VGS = -10V VDS = -15V ID = -6.4A VDD = -30V, VGS = -10V e e h Total Gate Charge h Total Gate Charge Gate Resistance Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time h h h ns ID = -1.0A RG = 6.0Ω See Figs. 19a & 19b VGS = 0V e pF VDS = -25V ƒ = 1.0kHz Max. 94 -6.4 Units mJ A Reverse Transfer Capacitance Parameter Avalanche Characteristics EAS IAR Single Pulse Avalanche Energy Avalanche Current Diode Characteristics Parameter IS ISM VSD trr Qrr (Body Diode) ™ d Min. ––– ––– ––– ––– ––– Typ. ––– ––– ––– 32 20 Max. -2.0 Units A Conditions MOSFET symbol showing the integral reverse p-n junction diode. G S.


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