IRFHM792TR2PBF

PD - 96368A IRFHM792TRPbF IRFHM792TR2PbF VDS Vgs max 100 ± 20 195 4.2 3.4 V V mΩ nC A 1 S 2 G 3 S 4 G D 8 HEXFET® Power MOSFET TOP VIEW D 7 D 6 D 5 S G S G D D D D D RDS(on) max (@VGS = 10V) Qg typ ID (@Tc(Bottom) = 25°C) h D PQFN Dual 3.3X3.3 mm Applications DC-DC Primary Switch 48V Battery Monitoring Features and Benefits Features Low RDSon (<195mΩ) Low Thermal Resistance to PCB (< 12°C/W) Low Profile (<1.2mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Orderable part number IRFHM792TRPBF IRFHM792TR2PBF Package Type PQFN Dual 3.3mm x 3.3mm PQFN Dual 3.3mm x 3.3mm Benefits Lower Conduction Losses Enable better thermal dissipation results in Increased Power Density ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Note Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C ID @ TC = 25°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Wirebond Limited) Pulsed Drain Current Max. 100 ± 20 2.3 1.8 4.8 3.1 3.4 14 2.3 10.4 0.018 -55 to + 150 ...