IRFHM8363PBF

IRFHM8363PbF VDS Vgs max 30 ± 20 14.9 20.4 6.7 10 V X @ D W Ã Q P U HEXFET® Power MOSFET V '  RDS(on) max (@VGS = 10V) (@VGS = 4.5V) '  '  S '  mΩ nC  *  6  *  6 G D D D D D S G Qg typ ID (@Tc(Bottom) = 25°C) D i PQFN Dual 3.3X3.3 mm A Applications Power Stage for high frequency buck converters Battery Protection charge and discharge switches Features and Benefits Features Low Thermal Resistance to PCB (< 6.7°C/W) Low Profile (<1.0mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Consumer Qualification Benefits Enable better thermal dissipation results in Increased Power Density ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Orderable part number IRFHM8363TRPBF IRFHM8363TR2PBF Package Type PQFN Dual 3.3mm x 3.3mm PQFN Dual 3.3mm x 3.3mm Standard Pack Form Quantity Tape and Reel 4000 400 Tape and Reel Note Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C ID @ TC = 25°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V (Package Limited) Pulsed Drain Current Power Dissipation Power Dissipation Linear ...