Power MOSFET
IRL630, SiHL630
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Conf...
Description
IRL630, SiHL630
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 5 V 40 5.5 24 Single
D
FEATURES
200 V 0.40
Dynamic dV/dt Rating Repetitive Avalanche Rated Logic Level Gate Drive RDS(on) Specified at VGS = 4 V and 5 V 150 °C Operating Temperature Fast Switching Ease of Paralleling Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
TO-220
DESCRIPTION
G S G D S N-Channel MOSFET
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
ORDERING INFORMATION
Package Lead (Pb)-free SnPb TO-220 IRL630PbF SiHL630-E3 IRL630 SiHL630
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque VGS at 5.0 V TC = 25 °C TC = 100 °C SYMBOL VGS ID IDM EAS IAR EAR PD dV/dt TJ, Tstg L...
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